SI4401BDY-T1-GE3

Manufacturer :

Vishay

Product Category :

Transistors - FETs, MOSFETs - Single

Series :

TrenchFET®

Package / Case :

8-SOIC (0.154, 3.90mm Width)

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Drain to Source Voltage (Vdss) :

40V

Weight :

186.993455mg

Current - Continuous Drain (Id) @ 25°C :

8.7A Ta

Turn On Delay Time :

16 ns

Resistance :

14mOhm

Terminal Position :

Dual

Gate Charge (Qg) (Max) @ Vgs :

55nC @ 5V

Power Dissipation :

1.5W

Length :

5mm

REACH SVHC :

Unknown

Width :

4mm

Fall Time (Typ) :

15 ns

Height :

1.75mm

Mount :

Surface Mount

Radiation Hardening :

No

Vgs(th) (Max) @ Id :

3V @ 250µA

Peak Reflow Temperature (Cel) :

260

JESD-609 Code :

e3

Element Configuration :

Single

Max Junction Temperature (Tj) :

150°C

Lead Free :

Lead Free

Terminal Form :

Gull wing

Mounting Type :

Surface Mount

Operating Mode :

ENHANCEMENT MODE

Number of Channels :

1

Number of Elements :

1

ECCN Code :

EAR99

FET Type :

P-Channel

Turn-Off Delay Time :

97 ns

Number of Pins :

8

Vgs (Max) :

±20V

Operating Temperature :

-55°C~150°C TJ

Gate to Source Voltage (Vgs) :

20V

Contact Plating :

Tin

Rds On (Max) @ Id, Vgs :

14m Ω @ 10.5A, 10V

Published :

2015

Power Dissipation-Max :

1.5W Ta

Number of Terminations :

8

Time@Peak Reflow Temperature-Max (s) :

40

RoHS Status :

ROHS3 Compliant

Factory Lead Time :

14 Weeks

Transistor Element Material :

SILICON

Rise Time :

15ns

Threshold Voltage :

-1V

Continuous Drain Current (ID) :

-10.5A

Drive Voltage (Max Rds On,Min Rds On) :

4.5V 10V

Packaging :

Tape and Reel (TR)

Pin Count :

8

Drain to Source Breakdown Voltage :

-40V