SI4401DY-T1-E3

Manufacturer :

Vishay

Product Category :

Transistors - FETs, MOSFETs - Single

Number of Elements :

1

Radiation Hardening :

No

Transistor Element Material :

SILICON

Time@Peak Reflow Temperature-Max (s) :

40

Peak Reflow Temperature (Cel) :

260

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Terminal Finish :

Matte Tin (Sn)

Turn On Delay Time :

17 ns

ECCN Code :

EAR99

Width :

4mm

Drive Voltage (Max Rds On,Min Rds On) :

4.5V 10V

REACH SVHC :

No SVHC

Power Dissipation :

1.5W

Fall Time (Typ) :

55 ns

Package / Case :

8-SOIC (0.154, 3.90mm Width)

Packaging :

Tape and Reel (TR)

RoHS Status :

ROHS3 Compliant

Lead Free :

Lead Free

Vgs (Max) :

±20V

Continuous Drain Current (ID) :

-10.5A

Resistance :

15.5MOhm

Turn-Off Delay Time :

122 ns

Gate Charge (Qg) (Max) @ Vgs :

50nC @ 5V

FET Type :

P-Channel

Rds On (Max) @ Id, Vgs :

15.5m Ω @ 10.5A, 10V

Number of Channels :

1

Mount :

Surface Mount

Nominal Vgs :

-1 V

Terminal Form :

Gull wing

Series :

TrenchFET®

DS Breakdown Voltage-Min :

40V

Length :

5mm

Threshold Voltage :

-1V

Weight :

506.605978mg

Pbfree Code :

yes

Gate to Source Voltage (Vgs) :

20V

Operating Mode :

ENHANCEMENT MODE

Operating Temperature :

-55°C~150°C TJ

Number of Pins :

8

Power Dissipation-Max :

1.5W Ta

Vgs(th) (Max) @ Id :

1V @ 250μA (Min)

Pin Count :

8

Rise Time :

18ns

Height :

1.55mm

Number of Terminations :

8

JESD-609 Code :

e3

Element Configuration :

Single

Current - Continuous Drain (Id) @ 25°C :

8.7A Ta

Mounting Type :

Surface Mount

Terminal Position :

Dual

Published :

2012

Drain to Source Voltage (Vdss) :

40V