SI4403CDY-T1-GE3

Manufacturer :

Vishay

Product Category :

Transistors - FETs, MOSFETs - Single

Factory Lead Time :

14 Weeks

Operating Temperature :

-55°C~150°C TJ

Rise Time :

18ns

Series :

TrenchFET®

Number of Elements :

1

Power Dissipation-Max :

5W Tc

Min Operating Temperature :

-55°C

Drain to Source Voltage (Vdss) :

20V

Packaging :

Tape and Reel (TR)

Mounting Type :

Surface Mount

Radiation Hardening :

No

Mount :

Surface Mount

Input Capacitance (Ciss) (Max) @ Vds :

2380pF @ 10V

Supplier Device Package :

8-SO

Turn-Off Delay Time :

108 ns

Fall Time (Typ) :

41 ns

Package / Case :

8-SOIC (0.154, 3.90mm Width)

Drive Voltage (Max Rds On,Min Rds On) :

1.8V 4.5V

RoHS Status :

ROHS3 Compliant

Number of Pins :

8

Drain to Source Breakdown Voltage :

20V

Input Capacitance :

2.38nF

Current - Continuous Drain (Id) @ 25°C :

13.4A Tc

Threshold Voltage :

-400mV

Rds On Max :

15.5 mΩ

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Turn On Delay Time :

7 ns

REACH SVHC :

No SVHC

Gate to Source Voltage (Vgs) :

8V

Lead Free :

Lead Free

Resistance :

15.5MOhm

Vgs(th) (Max) @ Id :

1V @ 250μA

Drain to Source Resistance :

15.5MOhm

Gate Charge (Qg) (Max) @ Vgs :

90nC @ 8V

Contact Plating :

Tin

Power Dissipation :

2.5W

Continuous Drain Current (ID) :

13.4A

Weight :

506.605978mg

Max Operating Temperature :

150°C

Vgs (Max) :

±8V

Number of Channels :

1

Published :

2012

Rds On (Max) @ Id, Vgs :

15.5mOhm @ 9A, 4.5V

FET Type :

P-Channel