SI4404DY-T1-E3
- Mfr.Part #
- SI4404DY-T1-E3
- Manufacturer
- Vishay
- Package / Case
- 8-SOIC (0.154, 3.90mm Width)
- Datasheet
- Download
- Description
- MOSFET N-CH 30V 15A 8SO
- Stock
- 2,172
- In Stock :
- 2,172
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- Manufacturer :
- Vishay
- Product Category :
- Transistors - FETs, MOSFETs - Single
- Terminal Position :
- Dual
- JESD-609 Code :
- e3
- RoHS Status :
- ROHS3 Compliant
- Package / Case :
- 8-SOIC (0.154, 3.90mm Width)
- Vgs (Max) :
- ±20V
- Rise Time :
- 15ns
- Power Dissipation :
- 1.6W
- Packaging :
- Tape and Reel (TR)
- FET Type :
- N-Channel
- Series :
- TrenchFET®
- Operating Temperature :
- -55°C~150°C TJ
- Number of Pins :
- 8
- Input Capacitance :
- 2nF
- Lead Free :
- Lead Free
- Continuous Drain Current (ID) :
- 23A
- Number of Terminations :
- 8
- Operating Mode :
- ENHANCEMENT MODE
- Nominal Vgs :
- 1 V
- Time@Peak Reflow Temperature-Max (s) :
- 40
- Transistor Element Material :
- SILICON
- Peak Reflow Temperature (Cel) :
- 260
- Mount :
- Surface Mount
- Turn-Off Delay Time :
- 105 ns
- Turn On Delay Time :
- 20 ns
- Radiation Hardening :
- No
- Current - Continuous Drain (Id) @ 25°C :
- 15A Ta
- Gate Charge (Qg) (Max) @ Vgs :
- 55nC @ 4.5V
- Number of Elements :
- 1
- Rds On (Max) @ Id, Vgs :
- 6.5m Ω @ 23A, 10V
- Resistance :
- 6.5mOhm
- Terminal Finish :
- MATTE TIN
- Drain to Source Breakdown Voltage :
- 30V
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Mounting Type :
- Surface Mount
- Element Configuration :
- Single
- Gate to Source Voltage (Vgs) :
- 20V
- Pin Count :
- 8
- Terminal Form :
- Gull wing
- REACH SVHC :
- Unknown
- Published :
- 2009
- Drive Voltage (Max Rds On,Min Rds On) :
- 4.5V 10V
- Fall Time (Typ) :
- 40 ns
- Vgs(th) (Max) @ Id :
- 3V @ 250µA
- Power Dissipation-Max :
- 1.6W Ta
- ECCN Code :
- EAR99
- Datasheets
- SI4404DY-T1-E3

N-Channel Tape & Reel (TR) 6.5m Ω @ 23A, 10V ±20V 55nC @ 4.5V 8-SOIC (0.154, 3.90mm Width)
SI4404DY-T1-E3 Overview
The drain current is the maximum continuous current the device can conduct, and the continuous drain current (ID) of this device is 23A. Drain-source breakdown voltage is the VDS at which a specified value of ID flows, with VGS=30V. And this device has 30V drain to source breakdown voltage.Turn-Off delay time is the time taken to charge the input capacitance of the device before drain current conduction can start, and its turn-off delay time is 105 ns.Turn-on delay time is the time taken to charge the input capacitance of the device before drain current conduction can start, and its delay time is 20 ns.The gate-source voltage, VGS, of a FET transistor is the voltage that falls across the gate-source terminal of the transistor and its voltage can be 20V.By using drive voltage (4.5V 10V), this device helps reduce its overall power consumption.
SI4404DY-T1-E3 Features
a continuous drain current (ID) of 23A
a drain-to-source breakdown voltage of 30V voltage
the turn-off delay time is 105 ns
SI4404DY-T1-E3 Applications
There are a lot of Vishay Siliconix
SI4404DY-T1-E3 applications of single MOSFETs transistors.
- LCD/LED TV
- Consumer Appliances
- Lighting
- Uninterruptible Power Supply
- AC-DC Power Supply
- Synchronous Rectification for ATX 1 Server I Telecom PSU
- Motor drives and Uninterruptible Power Supplies
- Micro Solar Inverter
- DC/DC converters
- Power Tools
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