SI4490DY-T1-GE3

Manufacturer :

Vishay

Product Category :

Transistors - FETs, MOSFETs - Single

Operating Temperature :

-55°C~150°C TJ

Continuous Drain Current (ID) :

2.85A

Power Dissipation :

3.1W

Number of Terminations :

8

Number of Channels :

1

Element Configuration :

Single

Number of Pins :

8

Factory Lead Time :

14 Weeks

ECCN Code :

EAR99

Turn On Delay Time :

14 ns

Weight :

506.605978mg

Package / Case :

8-SOIC (0.154, 3.90mm Width)

Vgs(th) (Max) @ Id :

2V @ 250μA (Min)

DS Breakdown Voltage-Min :

200V

Pbfree Code :

yes

Power Dissipation-Max :

1.56W Ta

Mounting Type :

Surface Mount

Series :

TrenchFET®

Drive Voltage (Max Rds On,Min Rds On) :

6V 10V

Contact Plating :

Tin

Gate Charge (Qg) (Max) @ Vgs :

42nC @ 10V

Height :

1.55mm

Resistance :

80mOhm

Gate to Source Voltage (Vgs) :

20V

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

REACH SVHC :

No SVHC

Drain to Source Voltage (Vdss) :

200V

Length :

5mm

Vgs (Max) :

±20V

Turn-Off Delay Time :

32 ns

FET Type :

N-Channel

Terminal Position :

Dual

Packaging :

Tape and Reel (TR)

Rise Time :

20ns

Terminal Form :

Gull wing

Peak Reflow Temperature (Cel) :

260

Rds On (Max) @ Id, Vgs :

80m Ω @ 4A, 10V

Fall Time (Typ) :

25 ns

JESD-609 Code :

e3

Time@Peak Reflow Temperature-Max (s) :

30

Operating Mode :

ENHANCEMENT MODE

Current - Continuous Drain (Id) @ 25°C :

2.85A Ta

Lead Free :

Lead Free

Radiation Hardening :

No

Mount :

Surface Mount

Threshold Voltage :

2V

RoHS Status :

ROHS3 Compliant

Transistor Element Material :

SILICON

Number of Elements :

1

Pin Count :

8

Published :

2013

Width :

4mm