SI4488DY-T1-GE3

Manufacturer :

Vishay

Product Category :

Transistors - FETs, MOSFETs - Single

Gate Charge (Qg) (Max) @ Vgs :

36nC @ 10V

Pbfree Code :

yes

Operating Mode :

ENHANCEMENT MODE

Drive Voltage (Max Rds On,Min Rds On) :

10V

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Pin Count :

8

Radiation Hardening :

No

Turn-Off Delay Time :

22 ns

Time@Peak Reflow Temperature-Max (s) :

40

Current - Continuous Drain (Id) @ 25°C :

3.5A Ta

Factory Lead Time :

14 Weeks

Drain-source On Resistance-Max :

0.05Ohm

Drain to Source Breakdown Voltage :

150V

Terminal Form :

Gull wing

Turn On Delay Time :

12 ns

Published :

2012

ECCN Code :

EAR99

Gate to Source Voltage (Vgs) :

20V

Vgs (Max) :

±20V

Weight :

506.605978mg

Package / Case :

8-SOIC (0.154, 3.90mm Width)

JESD-609 Code :

e3

Fall Time (Typ) :

10 ns

Operating Temperature :

-55°C~150°C TJ

Rise Time :

7ns

Number of Channels :

1

Element Configuration :

Single

Packaging :

Tape and Reel (TR)

Number of Terminations :

8

Series :

TrenchFET®

Power Dissipation-Max :

1.56W Ta

Continuous Drain Current (ID) :

5A

Transistor Element Material :

SILICON

Peak Reflow Temperature (Cel) :

260

RoHS Status :

ROHS3 Compliant

Power Dissipation :

1.56W

Mounting Type :

Surface Mount

FET Type :

N-Channel

REACH SVHC :

No SVHC

Rds On (Max) @ Id, Vgs :

50m Ω @ 5A, 10V

Terminal Position :

Dual

Threshold Voltage :

2V

Vgs(th) (Max) @ Id :

2V @ 250μA (Min)

Number of Elements :

1

Number of Pins :

8

Mount :

Surface Mount

Terminal Finish :

MATTE TIN