SI4488DY-T1-E3

Manufacturer :

Vishay

Product Category :

Transistors - FETs, MOSFETs - Single

FET Type :

N-Channel

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Rds On (Max) @ Id, Vgs :

50m Ω @ 5A, 10V

Nominal Vgs :

2 V

Pin Count :

8

RoHS Status :

ROHS3 Compliant

Vgs (Max) :

±20V

Turn On Delay Time :

12 ns

Current - Continuous Drain (Id) @ 25°C :

3.5A Ta

Factory Lead Time :

14 Weeks

Operating Temperature :

-55°C~150°C TJ

Width :

3.9878mm

Drain to Source Breakdown Voltage :

150V

Rise Time :

7ns

Pbfree Code :

yes

JESD-609 Code :

e3

Power Dissipation-Max :

1.56W Ta

Transistor Element Material :

SILICON

Packaging :

Tape and Reel (TR)

ECCN Code :

EAR99

REACH SVHC :

No SVHC

Element Configuration :

Single

Peak Reflow Temperature (Cel) :

260

Radiation Hardening :

No

Number of Terminations :

8

Gate to Source Voltage (Vgs) :

20V

Series :

TrenchFET®

Height :

1.5494mm

Length :

4.9784mm

Weight :

506.605978mg

Operating Mode :

ENHANCEMENT MODE

Number of Pins :

8

Resistance :

50mOhm

Number of Channels :

1

Package / Case :

8-SOIC (0.154, 3.90mm Width)

Vgs(th) (Max) @ Id :

2V @ 250μA (Min)

Lead Free :

Lead Free

Mounting Type :

Surface Mount

Turn-Off Delay Time :

22 ns

Terminal Finish :

Matte Tin (Sn)

Time@Peak Reflow Temperature-Max (s) :

40

Fall Time (Typ) :

7 ns

Continuous Drain Current (ID) :

5A

Number of Elements :

1

Mount :

Surface Mount

Gate Charge (Qg) (Max) @ Vgs :

36nC @ 10V

Terminal Form :

Gull wing

Drive Voltage (Max Rds On,Min Rds On) :

10V

Terminal Position :

Dual

Published :

2009

Power Dissipation :

1.56W

Threshold Voltage :

2V