SI4487DY-T1-GE3

Manufacturer :

Vishay

Product Category :

Transistors - FETs, MOSFETs - Single

Package / Case :

8-SOIC (0.154, 3.90mm Width)

Mounting Type :

Surface Mount

Lead Free :

Lead Free

Drain to Source Voltage (Vdss) :

30V

Input Capacitance (Ciss) (Max) @ Vds :

1075pF @ 15V

Drive Voltage (Max Rds On,Min Rds On) :

4.5V 10V

Terminal Finish :

PURE MATTE TIN

Vgs(th) (Max) @ Id :

2.5V @ 250μA

Configuration :

SINGLE WITH BUILT-IN DIODE

Terminal Position :

Dual

Power Dissipation-Max :

2.5W Ta 5W Tc

Number of Elements :

1

ECCN Code :

EAR99

Factory Lead Time :

15 Weeks

Current - Continuous Drain (Id) @ 25°C :

11.6A Tc

Number of Channels :

1

Mount :

Surface Mount

Continuous Drain Current (ID) :

8.2A

Series :

TrenchFET®

Number of Terminations :

8

Published :

2013

Terminal Form :

Gull wing

Vgs (Max) :

±25V

Pin Count :

8

Gate Charge (Qg) (Max) @ Vgs :

36nC @ 10V

FET Type :

P-Channel

Peak Reflow Temperature (Cel) :

260

Turn-Off Delay Time :

28 ns

Drain-source On Resistance-Max :

0.0205Ohm

Operating Mode :

ENHANCEMENT MODE

Number of Pins :

8

RoHS Status :

ROHS3 Compliant

Transistor Application :

SWITCHING

Gate to Source Voltage (Vgs) :

25V

Fall Time (Typ) :

10 ns

Turn On Delay Time :

9 ns

Radiation Hardening :

No

Rds On (Max) @ Id, Vgs :

20.5m Ω @ 10A, 10V

Time@Peak Reflow Temperature-Max (s) :

30

Rise Time :

8ns

JESD-609 Code :

e3

Packaging :

Tape and Reel (TR)

Transistor Element Material :

SILICON

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Operating Temperature :

-55°C~150°C TJ

Drain to Source Breakdown Voltage :

-30V

Power Dissipation :

2.5W