SI4486EY-T1-E3

Manufacturer :

Vishay

Product Category :

Transistors - FETs, MOSFETs - Single

Packaging :

Tape and Reel (TR)

Series :

TrenchFET®

Current - Continuous Drain (Id) @ 25°C :

5.4A Ta

Continuous Drain Current (ID) :

7.9A

REACH SVHC :

No SVHC

Power Dissipation-Max :

1.8W Ta

Fall Time (Typ) :

10 ns

Mount :

Surface Mount

Resistance :

25mOhm

Length :

4.9784mm

Mounting Type :

Surface Mount

Rise Time :

10ns

Gate Charge (Qg) (Max) @ Vgs :

44nC @ 10V

Drain to Source Breakdown Voltage :

100V

Vgs (Max) :

±20V

Drain to Source Resistance :

25mOhm

Radiation Hardening :

No

Number of Pins :

8

Number of Elements :

1

Power Dissipation :

1.8W

RoHS Status :

ROHS3 Compliant

Gate to Source Voltage (Vgs) :

20V

Height :

1.5494mm

Operating Temperature :

-55°C~175°C TJ

Width :

3.9878mm

Drive Voltage (Max Rds On,Min Rds On) :

6V 10V

Package / Case :

8-SOIC (0.154, 3.90mm Width)

Supplier Device Package :

8-SO

Max Operating Temperature :

150°C

Turn On Delay Time :

20 ns

Threshold Voltage :

2V

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Vgs(th) (Max) @ Id :

2V @ 250μA (Min)

Rds On (Max) @ Id, Vgs :

25mOhm @ 7.9A, 10V

Element Configuration :

Single

Turn-Off Delay Time :

46 ns

Drain to Source Voltage (Vdss) :

100V

Published :

2008

FET Type :

N-Channel

Rds On Max :

25 mΩ

Nominal Vgs :

2 V

Min Operating Temperature :

-55°C

Lead Free :

Lead Free