SI4484EY-T1-GE3

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Mfr.Part #
SI4484EY-T1-GE3
Manufacturer
Vishay
Package / Case
8-SOIC (0.154, 3.90mm Width)
Datasheet
Download
Description
MOSFET N-CH 100V 4.8A 8SO
Stock
2,097
In Stock :
2,097

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Manufacturer :
Vishay
Product Category :
Transistors - FETs, MOSFETs - Single
Gate Charge (Qg) (Max) @ Vgs :
30nC @ 10V
Weight :
506.605978mg
Element Configuration :
Single
Rds On Max :
34 mΩ
Drain to Source Voltage (Vdss) :
100V
Supplier Device Package :
8-SO
Package / Case :
8-SOIC (0.154, 3.90mm Width)
Min Operating Temperature :
-55°C
Threshold Voltage :
2V
Mount :
Surface Mount
Moisture Sensitivity Level (MSL) :
1 (Unlimited)
Current - Continuous Drain (Id) @ 25°C :
4.8A Ta
Power Dissipation-Max :
1.8W Ta
Drain to Source Resistance :
34mOhm
Number of Channels :
1
Rds On (Max) @ Id, Vgs :
34mOhm @ 6.9A, 10V
RoHS Status :
ROHS3 Compliant
Vgs (Max) :
±20V
Operating Temperature :
-55°C~175°C TJ
Max Operating Temperature :
175°C
Number of Pins :
8
Drive Voltage (Max Rds On,Min Rds On) :
6V 10V
Series :
TrenchFET®
Published :
2006
FET Type :
N-Channel
Packaging :
Tape and Reel (TR)
Mounting Type :
Surface Mount
Vgs(th) (Max) @ Id :
2V @ 250μA (Min)
Power Dissipation :
1.8W
Number of Elements :
1
Drain to Source Breakdown Voltage :
100V
REACH SVHC :
No SVHC
Gate to Source Voltage (Vgs) :
20V
Continuous Drain Current (ID) :
4.8A
Datasheets
SI4484EY-T1-GE3
Introducing Transistors - FETs, MOSFETs - Single Vishay SI4484EY-T1-GE3 from Chip IC,where excellence meets affordability. This product stands out with its Package / Case:8-SOIC (0.154, 3.90mm Width), Number of Channels:1, Operating Temperature:-55°C~175°C TJ, Number of Pins:8, Mounting Type:Surface Mount, SI4484EY-T1-GE3 pinout, SI4484EY-T1-GE3 datasheet PDF, SI4484EY-T1-GE3 amp .Beyond Transistors - FETs, MOSFETs - Single Vishay SI4484EY-T1-GE3 ,we also offer EPC2019, EPC2053, EPC2015C, Our vast inventory has you covered. Contact us now for immediate solutions.

Vishay SI4484EY-T1-GE3


N-Channel Tape & Reel (TR) 34mOhm @ 6.9A, 10V ±20V 30nC @ 10V 100V 8-SOIC (0.154, 3.90mm Width)

SI4484EY-T1-GE3 Overview


The drain current is the maximum continuous current the device can conduct, and this device has 4.8A continuous drain current (ID).A drainage-to-source breakdown voltage corresponds to the voltage at which a specified value of ID flows, where VGS is 100V, and this device has a drainage-to-source breakdown voltage of 100VV.This device has a drain-to-source resistance of 34mOhm when a gate-to-source voltage (VGS) is applied to bias it into the on state, and when this voltage is applied to bias it into the on state.An FET transistor's gate-source voltage, VGS, indicates how much voltage is applied across the transistor's gate-source terminal and it can range from 20V to 1.In this case, the threshold voltage of the transistor is 2V, which means that it will not activate any of its functions when its threshold voltage reaches 2V.For this transistor to work, a voltage 100V is required between drain and source (Vdss).Using drive voltage (6V 10V), this device contributes to a reduction in overall power consumption.

SI4484EY-T1-GE3 Features


a continuous drain current (ID) of 4.8A
a drain-to-source breakdown voltage of 100V voltage
single MOSFETs transistor is 34mOhm
a threshold voltage of 2V
a 100V drain to source voltage (Vdss)


SI4484EY-T1-GE3 Applications


There are a lot of Vishay Siliconix
SI4484EY-T1-GE3 applications of single MOSFETs transistors.


  • AC-DC Power Supply
  • Synchronous Rectification for ATX 1 Server I Telecom PSU
  • Motor drives and Uninterruptible Power Supplies
  • Micro Solar Inverter
  • DC/DC converters
  • Power Tools
  • Motor Drives and Uninterruptible Power Supples
  • Synchronous Rectification
  • Battery Protection Circuit
  • Telecom 1 Sever Power Supplies
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