SI4483ADY-T1-GE3

Manufacturer :

Vishay

Product Category :

Transistors - FETs, MOSFETs - Single

Time@Peak Reflow Temperature-Max (s) :

30

Mount :

Surface Mount

Mounting Type :

Surface Mount

Packaging :

Tape and Reel (TR)

RoHS Status :

ROHS3 Compliant

Rds On (Max) @ Id, Vgs :

8.8m Ω @ 10A, 10V

Contact Plating :

Tin

Radiation Hardening :

No

Fall Time (Typ) :

28 ns

FET Type :

P-Channel

Factory Lead Time :

14 Weeks

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Current - Continuous Drain (Id) @ 25°C :

19.2A Tc

Drain to Source Voltage (Vdss) :

30V

Terminal Position :

Dual

Rise Time :

150ns

Gate Charge (Qg) (Max) @ Vgs :

135nC @ 10V

Number of Channels :

1

Gate to Source Voltage (Vgs) :

25V

Vgs (Max) :

±25V

Package / Case :

8-SOIC (0.154, 3.90mm Width)

Peak Reflow Temperature (Cel) :

260

Published :

2013

Transistor Element Material :

SILICON

Terminal Form :

Gull wing

Power Dissipation :

2.9W

Power Dissipation-Max :

2.9W Ta 5.9W Tc

Series :

TrenchFET®

Weight :

186.993455mg

Transistor Application :

SWITCHING

Lead Free :

Lead Free

Turn-Off Delay Time :

43 ns

Number of Terminations :

8

Drive Voltage (Max Rds On,Min Rds On) :

4.5V 10V

REACH SVHC :

Unknown

Length :

5mm

Number of Pins :

8

Height :

1.5mm

Turn On Delay Time :

70 ns

Width :

4mm

Operating Temperature :

-55°C~150°C TJ

Vgs(th) (Max) @ Id :

2.6V @ 250μA

Pin Count :

8

JESD-609 Code :

e3

Resistance :

8.8MOhm

Threshold Voltage :

-2.1V

Number of Elements :

1

Input Capacitance (Ciss) (Max) @ Vds :

3900pF @ 15V

Configuration :

SINGLE WITH BUILT-IN DIODE

Continuous Drain Current (ID) :

13.5A