SI4480DY-T1-E3

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Mfr.Part #
SI4480DY-T1-E3
Manufacturer
Vishay
Package / Case
8-SOIC (0.154, 3.90mm Width)
Datasheet
Download
Description
MOSFET N-CH 80V 6A 8-SOIC
Stock
1
In Stock :
1

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Manufacturer :
Vishay
Product Category :
Transistors - FETs, MOSFETs - Single
Operating Temperature :
-55°C~150°C TJ
Fall Time (Typ) :
22 ns
Drain to Source Breakdown Voltage :
80V
Drain to Source Voltage (Vdss) :
80V
Width :
4mm
Max Operating Temperature :
150°C
Rds On (Max) @ Id, Vgs :
35mOhm @ 6A, 10V
Mount :
Surface Mount
Drive Voltage (Max Rds On,Min Rds On) :
6V 10V
Turn-Off Delay Time :
52 ns
Length :
5mm
Resistance :
35mOhm
Power Dissipation :
2.5W
Continuous Drain Current (ID) :
6A
Supplier Device Package :
8-SO
Published :
2016
Radiation Hardening :
No
Number of Pins :
8
Drain to Source Resistance :
35mOhm
Vgs (Max) :
±20V
Mounting Type :
Surface Mount
Min Operating Temperature :
-55°C
Element Configuration :
Single
Number of Channels :
1
Rds On Max :
35 mΩ
Rise Time :
12.5ns
Power Dissipation-Max :
2.5W Ta
Gate to Source Voltage (Vgs) :
20V
Height :
1.55mm
Weight :
186.993455mg
Vgs(th) (Max) @ Id :
2V @ 250μA (Min)
Packaging :
Tape and Reel (TR)
RoHS Status :
ROHS3 Compliant
Moisture Sensitivity Level (MSL) :
1 (Unlimited)
Lead Free :
Lead Free
FET Type :
N-Channel
Package / Case :
8-SOIC (0.154, 3.90mm Width)
Turn On Delay Time :
12.5 ns
Gate Charge (Qg) (Max) @ Vgs :
50nC @ 10V
Number of Elements :
1
Datasheets
SI4480DY-T1-E3
Introducing Transistors - FETs, MOSFETs - Single Vishay SI4480DY-T1-E3 from Chip IC,where excellence meets affordability. This product stands out with its Operating Temperature:-55°C~150°C TJ, Number of Pins:8, Mounting Type:Surface Mount, Number of Channels:1, Package / Case:8-SOIC (0.154, 3.90mm Width), SI4480DY-T1-E3 pinout, SI4480DY-T1-E3 datasheet PDF, SI4480DY-T1-E3 amp .Beyond Transistors - FETs, MOSFETs - Single Vishay SI4480DY-T1-E3 ,we also offer EPC2019, EPC2053, EPC2015C, Our vast inventory has you covered. Contact us now for immediate solutions.

Vishay SI4480DY-T1-E3


N-Channel Tape & Reel (TR) 35mOhm @ 6A, 10V ±20V 50nC @ 10V 80V 8-SOIC (0.154, 3.90mm Width)

SI4480DY-T1-E3 Overview


Its continuous drain current is 6A for this device. Drain current refers to the capacity of the device to conduct continuous current.Single MOSFETs transistor is the voltage at which VDS flows at a specified ID value, wSingle MOSFETs transistorh VGS=80V, and this device has a drain-to-source breakdown voltage of 80V voltage.A device's turn-off delay time is the amount of time it takes to charge its input capacitance before drain current conduction can begin, which is 52 ns.The Drain-to-Source Resistance (DTS) of a MOSFET is 35mOhm when a specific gate-to-source voltage (VGS) is applied to bias it into the on state.Before drain current conduction begins, the device's input capacitance must be charged, so the delay time is 12.5 ns.Generally, the gate-source voltage (VGS) of a FET transistor is the voltage across its gate-source terminal, which is 20V.To operate this transistor, you need to apply a 80V drain to source voltage (Vdss).This device uses no drive voltage (6V 10V) to reduce its overall power consumption.

SI4480DY-T1-E3 Features


a continuous drain current (ID) of 6A
a drain-to-source breakdown voltage of 80V voltage
the turn-off delay time is 52 ns
single MOSFETs transistor is 35mOhm
a 80V drain to source voltage (Vdss)


SI4480DY-T1-E3 Applications


There are a lot of Vishay Siliconix
SI4480DY-T1-E3 applications of single MOSFETs transistors.


  • Power Tools
  • Motor Drives and Uninterruptible Power Supples
  • Synchronous Rectification
  • Battery Protection Circuit
  • Telecom 1 Sever Power Supplies
  • Industrial Power Supplies
  • PFC stages, hard switching PWM stages and resonant switching
  • PWM stages for e.g. PC Silverbox, Adapter, LCD & PDP TV,
  • Lighting, Server, Telecom and UPS.
  • DC-to-DC converters
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