SI4480DY-T1-E3
- Mfr.Part #
- SI4480DY-T1-E3
- Manufacturer
- Vishay
- Package / Case
- 8-SOIC (0.154, 3.90mm Width)
- Datasheet
- Download
- Description
- MOSFET N-CH 80V 6A 8-SOIC
- Stock
- 1
- In Stock :
- 1
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- Manufacturer :
- Vishay
- Product Category :
- Transistors - FETs, MOSFETs - Single
- Operating Temperature :
- -55°C~150°C TJ
- Fall Time (Typ) :
- 22 ns
- Drain to Source Breakdown Voltage :
- 80V
- Drain to Source Voltage (Vdss) :
- 80V
- Width :
- 4mm
- Max Operating Temperature :
- 150°C
- Rds On (Max) @ Id, Vgs :
- 35mOhm @ 6A, 10V
- Mount :
- Surface Mount
- Drive Voltage (Max Rds On,Min Rds On) :
- 6V 10V
- Turn-Off Delay Time :
- 52 ns
- Length :
- 5mm
- Resistance :
- 35mOhm
- Power Dissipation :
- 2.5W
- Continuous Drain Current (ID) :
- 6A
- Supplier Device Package :
- 8-SO
- Published :
- 2016
- Radiation Hardening :
- No
- Number of Pins :
- 8
- Drain to Source Resistance :
- 35mOhm
- Vgs (Max) :
- ±20V
- Mounting Type :
- Surface Mount
- Min Operating Temperature :
- -55°C
- Element Configuration :
- Single
- Number of Channels :
- 1
- Rds On Max :
- 35 mΩ
- Rise Time :
- 12.5ns
- Power Dissipation-Max :
- 2.5W Ta
- Gate to Source Voltage (Vgs) :
- 20V
- Height :
- 1.55mm
- Weight :
- 186.993455mg
- Vgs(th) (Max) @ Id :
- 2V @ 250μA (Min)
- Packaging :
- Tape and Reel (TR)
- RoHS Status :
- ROHS3 Compliant
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Lead Free :
- Lead Free
- FET Type :
- N-Channel
- Package / Case :
- 8-SOIC (0.154, 3.90mm Width)
- Turn On Delay Time :
- 12.5 ns
- Gate Charge (Qg) (Max) @ Vgs :
- 50nC @ 10V
- Number of Elements :
- 1
- Datasheets
- SI4480DY-T1-E3

N-Channel Tape & Reel (TR) 35mOhm @ 6A, 10V ±20V 50nC @ 10V 80V 8-SOIC (0.154, 3.90mm Width)
SI4480DY-T1-E3 Overview
Its continuous drain current is 6A for this device. Drain current refers to the capacity of the device to conduct continuous current.Single MOSFETs transistor is the voltage at which VDS flows at a specified ID value, wSingle MOSFETs transistorh VGS=80V, and this device has a drain-to-source breakdown voltage of 80V voltage.A device's turn-off delay time is the amount of time it takes to charge its input capacitance before drain current conduction can begin, which is 52 ns.The Drain-to-Source Resistance (DTS) of a MOSFET is 35mOhm when a specific gate-to-source voltage (VGS) is applied to bias it into the on state.Before drain current conduction begins, the device's input capacitance must be charged, so the delay time is 12.5 ns.Generally, the gate-source voltage (VGS) of a FET transistor is the voltage across its gate-source terminal, which is 20V.To operate this transistor, you need to apply a 80V drain to source voltage (Vdss).This device uses no drive voltage (6V 10V) to reduce its overall power consumption.
SI4480DY-T1-E3 Features
a continuous drain current (ID) of 6A
a drain-to-source breakdown voltage of 80V voltage
the turn-off delay time is 52 ns
single MOSFETs transistor is 35mOhm
a 80V drain to source voltage (Vdss)
SI4480DY-T1-E3 Applications
There are a lot of Vishay Siliconix
SI4480DY-T1-E3 applications of single MOSFETs transistors.
- Power Tools
- Motor Drives and Uninterruptible Power Supples
- Synchronous Rectification
- Battery Protection Circuit
- Telecom 1 Sever Power Supplies
- Industrial Power Supplies
- PFC stages, hard switching PWM stages and resonant switching
- PWM stages for e.g. PC Silverbox, Adapter, LCD & PDP TV,
- Lighting, Server, Telecom and UPS.
- DC-to-DC converters
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