SI4472DY-T1-GE3

Manufacturer :

Vishay

Product Category :

Transistors - FETs, MOSFETs - Single

Vgs(th) (Max) @ Id :

4.5V @ 250μA

Drain to Source Breakdown Voltage :

150V

Transistor Application :

SWITCHING

ECCN Code :

EAR99

Number of Elements :

1

Turn On Delay Time :

16 ns

Operating Temperature :

-55°C~150°C TJ

Pin Count :

8

Fall Time (Typ) :

7 ns

Gate Charge (Qg) (Max) @ Vgs :

43nC @ 10V

Power Dissipation :

3.1W

Current - Continuous Drain (Id) @ 25°C :

7.7A Tc

Nominal Vgs :

4.5 V

Number of Channels :

1

Terminal Position :

Dual

Peak Reflow Temperature (Cel) :

260

Number of Pins :

8

Rise Time :

12ns

JESD-609 Code :

e3

Mounting Type :

Surface Mount

Operating Mode :

ENHANCEMENT MODE

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Transistor Element Material :

SILICON

Factory Lead Time :

16 Weeks

FET Type :

N-Channel

RoHS Status :

ROHS3 Compliant

Power Dissipation-Max :

3.1W Ta 5.9W Tc

Published :

2011

Time@Peak Reflow Temperature-Max (s) :

40

Package / Case :

8-SOIC (0.154, 3.90mm Width)

Packaging :

Tape and Reel (TR)

Rds On (Max) @ Id, Vgs :

45m Ω @ 5A, 10V

Number of Terminations :

8

Turn-Off Delay Time :

20 ns

Terminal Form :

Gull wing

Gate to Source Voltage (Vgs) :

20V

Vgs (Max) :

±20V

Continuous Drain Current (ID) :

7.7A

Mount :

Surface Mount

Radiation Hardening :

No

Element Configuration :

Single

Drive Voltage (Max Rds On,Min Rds On) :

8V 10V

Lead Free :

Lead Free

Input Capacitance (Ciss) (Max) @ Vds :

1735pF @ 50V

Weight :

186.993455mg

Terminal Finish :

MATTE TIN

Drain-source On Resistance-Max :

0.047Ohm