SI4472DY-T1-E3

Manufacturer :

Vishay

Product Category :

Transistors - FETs, MOSFETs - Single

Vgs(th) (Max) @ Id :

4.5V @ 250μA

Power Dissipation-Max :

3.1W Ta 5.9W Tc

Transistor Application :

SWITCHING

JESD-609 Code :

e3

Radiation Hardening :

No

Current - Continuous Drain (Id) @ 25°C :

7.7A Tc

Operating Temperature :

-55°C~150°C TJ

Number of Terminations :

8

Number of Channels :

1

Time@Peak Reflow Temperature-Max (s) :

40

Lead Free :

Lead Free

FET Type :

N-Channel

Height :

1.55mm

Drive Voltage (Max Rds On,Min Rds On) :

8V 10V

Fall Time (Typ) :

7 ns

Number of Elements :

1

Transistor Element Material :

SILICON

Published :

2013

Drain to Source Voltage (Vdss) :

150V

Continuous Drain Current (ID) :

7.7A

Gate to Source Voltage (Vgs) :

20V

Turn On Delay Time :

16 ns

Vgs (Max) :

±20V

Package / Case :

8-SOIC (0.154, 3.90mm Width)

Width :

4mm

Terminal Finish :

MATTE TIN

Mount :

Surface Mount

Length :

5mm

Power Dissipation :

3.1W

Operating Mode :

ENHANCEMENT MODE

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Element Configuration :

Single

Rise Time :

12ns

Number of Pins :

8

Mounting Type :

Surface Mount

Terminal Form :

Gull wing

Rds On (Max) @ Id, Vgs :

45m Ω @ 5A, 10V

RoHS Status :

ROHS3 Compliant

Terminal Position :

Dual

Peak Reflow Temperature (Cel) :

260

Pin Count :

8

ECCN Code :

EAR99

Gate Charge (Qg) (Max) @ Vgs :

43nC @ 10V

Resistance :

45mOhm

Weight :

186.993455mg

Packaging :

Tape and Reel (TR)

Turn-Off Delay Time :

20 ns

Input Capacitance (Ciss) (Max) @ Vds :

1735pF @ 50V