SI4470EY-T1-GE3

Manufacturer :

Vishay

Product Category :

Transistors - FETs, MOSFETs - Single

Gate to Source Voltage (Vgs) :

20V

Fall Time (Typ) :

30 ns

Rds On Max :

11 mΩ

Max Operating Temperature :

175°C

Number of Pins :

8

Power Dissipation :

1.85W

FET Type :

N-Channel

Vgs (Max) :

±20V

Published :

2015

REACH SVHC :

No SVHC

Drain to Source Resistance :

11mOhm

Supplier Device Package :

8-SO

Rise Time :

12ns

Number of Elements :

1

Package / Case :

8-SOIC (0.154, 3.90mm Width)

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Packaging :

Tape and Reel (TR)

Mount :

Surface Mount

Vgs(th) (Max) @ Id :

2V @ 250μA (Min)

Radiation Hardening :

No

RoHS Status :

ROHS3 Compliant

Drive Voltage (Max Rds On,Min Rds On) :

6V 10V

Current - Continuous Drain (Id) @ 25°C :

9A Ta

Turn On Delay Time :

16 ns

Gate Charge (Qg) (Max) @ Vgs :

70nC @ 10V

Weight :

506.605978mg

Continuous Drain Current (ID) :

9A

Drain to Source Voltage (Vdss) :

60V

Nominal Vgs :

2 V

Operating Temperature :

-55°C~175°C TJ

Min Operating Temperature :

-55°C

Mounting Type :

Surface Mount

Rds On (Max) @ Id, Vgs :

11mOhm @ 12A, 10V

Power Dissipation-Max :

1.85W Ta

Number of Channels :

1

Series :

TrenchFET®

Element Configuration :

Single

Drain to Source Breakdown Voltage :

60V

Turn-Off Delay Time :

50 ns

Threshold Voltage :

2V