SI4466DY-T1-E3
- Mfr.Part #
- SI4466DY-T1-E3
- Manufacturer
- Vishay
- Package / Case
- 8-SOIC (0.154, 3.90mm Width)
- Datasheet
- Download
- Description
- MOSFET N-CH 20V 9.5A 8SO
- Stock
- 32,667
- In Stock :
- 32,667
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- Manufacturer :
- Vishay
- Product Category :
- Transistors - FETs, MOSFETs - Single
- Time@Peak Reflow Temperature-Max (s) :
- 40
- Packaging :
- Tape and Reel (TR)
- Series :
- TrenchFET®
- Number of Terminations :
- 8
- Continuous Drain Current (ID) :
- 13.5A
- Terminal Finish :
- Matte Tin (Sn)
- Terminal Form :
- Gull wing
- Current - Continuous Drain (Id) @ 25°C :
- 9.5A Ta
- Drive Voltage (Max Rds On,Min Rds On) :
- 2.5V 4.5V
- Pbfree Code :
- yes
- Fall Time (Typ) :
- 15 ns
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Vgs(th) (Max) @ Id :
- 1.4V @ 250μA
- Number of Elements :
- 1
- Transistor Application :
- SWITCHING
- Rds On (Max) @ Id, Vgs :
- 9m Ω @ 13.5A, 4.5V
- Drain Current-Max (Abs) (ID) :
- 9.5A
- JESD-609 Code :
- e3
- Turn-Off Delay Time :
- 150 ns
- Mount :
- Surface Mount
- Turn On Delay Time :
- 20 ns
- Vgs (Max) :
- ±12V
- Peak Reflow Temperature (Cel) :
- 260
- RoHS Status :
- ROHS3 Compliant
- Nominal Vgs :
- 600 mV
- Rise Time :
- 15ns
- Element Configuration :
- Single
- ECCN Code :
- EAR99
- Pin Count :
- 8
- Number of Pins :
- 8
- Threshold Voltage :
- 600mV
- Gate Charge (Qg) (Max) @ Vgs :
- 60nC @ 4.5V
- Radiation Hardening :
- No
- Gate to Source Voltage (Vgs) :
- 12V
- Resistance :
- 9mOhm
- Published :
- 2011
- Lead Free :
- Lead Free
- Power Dissipation :
- 1.5W
- Terminal Position :
- Dual
- Operating Mode :
- ENHANCEMENT MODE
- Package / Case :
- 8-SOIC (0.154, 3.90mm Width)
- REACH SVHC :
- Unknown
- Transistor Element Material :
- SILICON
- Drain to Source Breakdown Voltage :
- 20V
- Pulsed Drain Current-Max (IDM) :
- 50A
- Power Dissipation-Max :
- 1.5W Ta
- FET Type :
- N-Channel
- Operating Temperature :
- -55°C~150°C TJ
- Mounting Type :
- Surface Mount
- Datasheets
- SI4466DY-T1-E3

N-Channel Tape & Reel (TR) 9m Ω @ 13.5A, 4.5V ±12V 60nC @ 4.5V 8-SOIC (0.154, 3.90mm Width)
SI4466DY-T1-E3 Overview
The drain current is the maximum continuous current the device can conduct, and the continuous drain current (ID) of this device is 13.5A. Drain-source breakdown voltage is the VDS at which a specified value of ID flows, with VGS=20V. And this device has 20V drain to source breakdown voltage.The drain current is the maximum continuous current the device can conduct, and the drain current of this device is 9.5A.Turn-Off delay time is the time taken to charge the input capacitance of the device before drain current conduction can start, and its turn-off delay time is 150 ns.IDM is the maximum rated peak drain current for a power MOSFET, and its maximal pulsed drain current is 50A.Turn-on delay time is the time taken to charge the input capacitance of the device before drain current conduction can start, and its delay time is 20 ns.The gate-source voltage, VGS, of a FET transistor is the voltage that falls across the gate-source terminal of the transistor and its voltage can be 12V.Threshold voltage is the point at which an electrical device is set to activate any one of its operations, and this transistor has 600mV threshold voltage. By using drive voltage (2.5V 4.5V), this device helps reduce its overall power consumption.
SI4466DY-T1-E3 Features
a continuous drain current (ID) of 13.5A
a drain-to-source breakdown voltage of 20V voltage
the turn-off delay time is 150 ns
based on its rated peak drain current 50A.
a threshold voltage of 600mV
SI4466DY-T1-E3 Applications
There are a lot of Vishay Siliconix
SI4466DY-T1-E3 applications of single MOSFETs transistors.
- LCD/LED TV
- Consumer Appliances
- Lighting
- Uninterruptible Power Supply
- AC-DC Power Supply
- Synchronous Rectification for ATX 1 Server I Telecom PSU
- Motor drives and Uninterruptible Power Supplies
- Micro Solar Inverter
- DC/DC converters
- Power Tools
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