SI4465ADY-T1-GE3

Manufacturer :

Vishay

Product Category :

Transistors - FETs, MOSFETs - Single

Number of Terminations :

8

Gate Charge (Qg) (Max) @ Vgs :

85nC @ 4.5V

Factory Lead Time :

14 Weeks

Continuous Drain Current (ID) :

13.7A

Packaging :

Tape and Reel (TR)

Power Dissipation-Max :

3W Ta 6.5W Tc

Pin Count :

8

Rds On (Max) @ Id, Vgs :

9m Ω @ 14A, 4.5V

Drive Voltage (Max Rds On,Min Rds On) :

1.8V 4.5V

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Fall Time (Typ) :

112 ns

Terminal Position :

Dual

Time@Peak Reflow Temperature-Max (s) :

30

Operating Mode :

ENHANCEMENT MODE

Terminal Finish :

Pure Matte Tin (Sn)

Drain to Source Breakdown Voltage :

-8V

Power Dissipation :

3W

Rise Time :

170ns

Height :

1.5mm

Gate to Source Voltage (Vgs) :

8V

Vgs(th) (Max) @ Id :

1V @ 250μA

Terminal Form :

Gull wing

Drain-source On Resistance-Max :

0.009Ohm

Operating Temperature :

-55°C~150°C TJ

Mount :

Surface Mount

Number of Pins :

8

Weight :

186.993455mg

Number of Elements :

1

Turn On Delay Time :

33 ns

Peak Reflow Temperature (Cel) :

260

FET Type :

P-Channel

ECCN Code :

EAR99

Vgs (Max) :

±8V

Drain Current-Max (Abs) (ID) :

20A

Pbfree Code :

yes

RoHS Status :

ROHS3 Compliant

Published :

2012

Radiation Hardening :

No

Transistor Element Material :

SILICON

Length :

5mm

Element Configuration :

Single

Series :

TrenchFET®

Turn-Off Delay Time :

168 ns

Mounting Type :

Surface Mount

Threshold Voltage :

-450mV

REACH SVHC :

Unknown

Width :

4mm

Package / Case :

8-SOIC (0.154, 3.90mm Width)