SI4465ADY-T1-E3

Manufacturer :

Vishay

Product Category :

Transistors - FETs, MOSFETs - Single

RoHS Status :

ROHS3 Compliant

Transistor Element Material :

SILICON

ECCN Code :

EAR99

Vgs(th) (Max) @ Id :

1V @ 250μA

Continuous Drain Current (ID) :

-13.7A

REACH SVHC :

No SVHC

Resistance :

9mOhm

Weight :

186.993455mg

Operating Temperature :

-55°C~150°C TJ

Gate Charge (Qg) (Max) @ Vgs :

85nC @ 4.5V

Operating Mode :

ENHANCEMENT MODE

Threshold Voltage :

-450mV

Mount :

Surface Mount

Power Dissipation :

3W

Time@Peak Reflow Temperature-Max (s) :

40

Factory Lead Time :

14 Weeks

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Number of Terminations :

8

Power Dissipation-Max :

3W Ta 6.5W Tc

Length :

5mm

Terminal Position :

Dual

Drive Voltage (Max Rds On,Min Rds On) :

1.8V 4.5V

Published :

2006

Fall Time (Typ) :

112 ns

Width :

4mm

Rds On (Max) @ Id, Vgs :

9m Ω @ 14A, 4.5V

JESD-609 Code :

e3

Mounting Type :

Surface Mount

Element Configuration :

Single

Number of Pins :

8

Contact Plating :

Tin

Drain Current-Max (Abs) (ID) :

20A

Height :

1.5mm

Turn-Off Delay Time :

168 ns

Peak Reflow Temperature (Cel) :

260

Lead Free :

Lead Free

DS Breakdown Voltage-Min :

8V

Series :

TrenchFET®

Packaging :

Tape and Reel (TR)

Vgs (Max) :

±8V

Terminal Form :

Gull wing

Pin Count :

8

Pbfree Code :

yes

Rise Time :

170ns

Package / Case :

8-SOIC (0.154, 3.90mm Width)

Radiation Hardening :

No

Number of Elements :

1

FET Type :

P-Channel

Gate to Source Voltage (Vgs) :

8V

Turn On Delay Time :

33 ns