SI4464DY-T1-E3

Manufacturer :

Vishay

Product Category :

Transistors - FETs, MOSFETs - Single

REACH SVHC :

Unknown

Peak Reflow Temperature (Cel) :

260

Time@Peak Reflow Temperature-Max (s) :

40

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Weight :

186.993455mg

Series :

TrenchFET®

JESD-609 Code :

e3

Package / Case :

8-SOIC (0.154, 3.90mm Width)

Gate to Source Voltage (Vgs) :

20V

Turn On Delay Time :

10 ns

Length :

5mm

Drain to Source Breakdown Voltage :

200V

Gate Charge (Qg) (Max) @ Vgs :

18nC @ 10V

Number of Terminations :

8

Nominal Vgs :

2 V

Terminal Finish :

Matte Tin (Sn)

Fall Time (Typ) :

12 ns

Number of Elements :

1

Radiation Hardening :

No

FET Type :

N-Channel

Published :

2016

Pin Count :

8

Vgs (Max) :

±20V

Terminal Form :

Gull wing

Terminal Position :

Dual

Transistor Element Material :

SILICON

Element Configuration :

Single

Vgs(th) (Max) @ Id :

4V @ 250µA

Factory Lead Time :

14 Weeks

Resistance :

240mOhm

Packaging :

Tape and Reel (TR)

Operating Mode :

ENHANCEMENT MODE

Operating Temperature :

-55°C~150°C TJ

Transistor Application :

SWITCHING

Pbfree Code :

yes

Mount :

Surface Mount

RoHS Status :

ROHS3 Compliant

ECCN Code :

EAR99

Turn-Off Delay Time :

15 ns

Mounting Type :

Surface Mount

Number of Pins :

8

Lead Free :

Lead Free

Rise Time :

12ns

Power Dissipation-Max :

1.5W Ta

Power Dissipation :

1.5W

Drive Voltage (Max Rds On,Min Rds On) :

6V 10V

Width :

4mm

Continuous Drain Current (ID) :

1.7A

Current - Continuous Drain (Id) @ 25°C :

1.7A Ta

Height :

1.55mm

Number of Channels :

1

Rds On (Max) @ Id, Vgs :

240m Ω @ 2.2A, 10V