SI4463BDY-T1-GE3

Manufacturer :

Vishay

Product Category :

Transistors - FETs, MOSFETs - Single

Vgs(th) (Max) @ Id :

1.4V @ 250μA

Current - Continuous Drain (Id) @ 25°C :

9.8A Ta

Gate Charge (Qg) (Max) @ Vgs :

56nC @ 4.5V

Supplier Device Package :

8-SO

Number of Elements :

1

Weight :

186.993455mg

Packaging :

Tape and Reel (TR)

Turn On Delay Time :

35 ns

Turn-Off Delay Time :

115 ns

Mounting Type :

Surface Mount

Min Operating Temperature :

-55°C

Package / Case :

8-SOIC (0.154, 3.90mm Width)

FET Type :

P-Channel

Max Operating Temperature :

150°C

Vgs (Max) :

±12V

Series :

TrenchFET®

Continuous Drain Current (ID) :

13.7A

Mount :

Surface Mount

RoHS Status :

ROHS3 Compliant

Fall Time (Typ) :

75 ns

Threshold Voltage :

-1.4V

Number of Pins :

8

Rise Time :

60ns

Height :

1.55mm

Gate to Source Voltage (Vgs) :

12V

Factory Lead Time :

14 Weeks

Width :

4mm

Power Dissipation-Max :

1.5W Ta

Drain to Source Breakdown Voltage :

-20V

Radiation Hardening :

No

Element Configuration :

Single

Drain to Source Voltage (Vdss) :

20V

Published :

2009

Rds On (Max) @ Id, Vgs :

11mOhm @ 13.7A, 10V

Operating Temperature :

-55°C~150°C TJ

Power Dissipation :

1.5W

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Drain to Source Resistance :

11mOhm

REACH SVHC :

Unknown

Rds On Max :

11 mΩ

Number of Channels :

1

Drive Voltage (Max Rds On,Min Rds On) :

2.5V 10V

Length :

5mm