SI4463BDY-T1-E3

Manufacturer :

Vishay

Product Category :

Transistors - FETs, MOSFETs - Single

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Rds On (Max) @ Id, Vgs :

11m Ω @ 13.7A, 10V

Number of Pins :

8

Terminal Form :

Gull wing

Vgs(th) (Max) @ Id :

1.4V @ 250μA

Contact Plating :

Tin

Weight :

186.993455mg

RoHS Status :

ROHS3 Compliant

Drain to Source Voltage (Vdss) :

20V

Mounting Type :

Surface Mount

Turn On Delay Time :

35 ns

Pin Count :

8

Mount :

Surface Mount

Drive Voltage (Max Rds On,Min Rds On) :

2.5V 10V

Power Dissipation-Max :

1.5W Ta

Number of Elements :

1

Power Dissipation :

1.5W

Rise Time :

60ns

Height :

1.55mm

Terminal Position :

Dual

Transistor Element Material :

SILICON

Operating Temperature :

-55°C~150°C TJ

ECCN Code :

EAR99

REACH SVHC :

No SVHC

Published :

2009

Fall Time (Typ) :

60 ns

Threshold Voltage :

-1.4V

Element Configuration :

Single

Package / Case :

8-SOIC (0.154, 3.90mm Width)

JESD-609 Code :

e3

Number of Channels :

1

Peak Reflow Temperature (Cel) :

260

Current - Continuous Drain (Id) @ 25°C :

9.8A Ta

Factory Lead Time :

14 Weeks

Number of Terminations :

8

FET Type :

P-Channel

Operating Mode :

ENHANCEMENT MODE

DS Breakdown Voltage-Min :

20V

Gate to Source Voltage (Vgs) :

12V

Gate Charge (Qg) (Max) @ Vgs :

56nC @ 4.5V

Time@Peak Reflow Temperature-Max (s) :

20

Turn-Off Delay Time :

115 ns

Continuous Drain Current (ID) :

9.8A

Qualification Status :

Not Qualified

Vgs (Max) :

±12V

Resistance :

11mOhm

Series :

TrenchFET®

Width :

4mm

Packaging :

Tape and Reel (TR)

Lead Free :

Lead Free

Length :

5mm