SI4462DY-T1-E3

Manufacturer :

Vishay

Product Category :

Transistors - FETs, MOSFETs - Single

Drain to Source Voltage (Vdss) :

200V

Resistance :

17mOhm

Rds On Max :

480 mΩ

Width :

3.9878mm

Current - Continuous Drain (Id) @ 25°C :

1.15A Ta

Mount :

Surface Mount

Package / Case :

8-SOIC (0.154, 3.90mm Width)

Vgs(th) (Max) @ Id :

4V @ 250µA

Nominal Vgs :

4 V

Max Operating Temperature :

150°C

Drain to Source Breakdown Voltage :

200V

Lead Free :

Lead Free

Height :

1.5494mm

Supplier Device Package :

8-SO

Gate Charge (Qg) (Max) @ Vgs :

9nC @ 10V

Radiation Hardening :

No

Element Configuration :

Single

Turn On Delay Time :

10 ns

RoHS Status :

ROHS3 Compliant

REACH SVHC :

Unknown

Published :

2017

Power Dissipation :

1.3W

Length :

4.9784mm

Series :

TrenchFET®

Max Power Dissipation :

1.3W

Min Operating Temperature :

-55°C

Number of Pins :

8

Fall Time (Typ) :

12 ns

Continuous Drain Current (ID) :

1.5A

Number of Elements :

1

Turn-Off Delay Time :

10 ns

Mounting Type :

Surface Mount

Rise Time :

12ns

Gate to Source Voltage (Vgs) :

20V

FET Type :

N-Channel

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Drain to Source Resistance :

480mOhm

Packaging :

Cut Tape (CT)

Rds On (Max) @ Id, Vgs :

480mOhm @ 1.5A, 10V