SI4459ADY-T1-GE3

Manufacturer :

Vishay

Product Category :

Transistors - FETs, MOSFETs - Single

Turn On Delay Time :

16 ns

Drive Voltage (Max Rds On,Min Rds On) :

4.5V 10V

Mount :

Surface Mount

Contact Plating :

Tin

Transistor Element Material :

SILICON

Vgs(th) (Max) @ Id :

2.5V @ 250μA

Drain to Source Breakdown Voltage :

-30V

Weight :

186.993455mg

Transistor Application :

SWITCHING

Input Capacitance (Ciss) (Max) @ Vds :

6000pF @ 15V

Current - Continuous Drain (Id) @ 25°C :

29A Tc

Package / Case :

8-SOIC (0.154, 3.90mm Width)

Gate to Source Voltage (Vgs) :

20V

Fall Time (Typ) :

20 ns

FET Type :

P-Channel

Continuous Drain Current (ID) :

-29A

Published :

2015

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Element Configuration :

Single

REACH SVHC :

Unknown

Width :

4mm

JESD-609 Code :

e3

Number of Channels :

1

Peak Reflow Temperature (Cel) :

260

Resistance :

5mOhm

Drain to Source Voltage (Vdss) :

30V

Number of Pins :

8

Power Dissipation :

3.5W

Terminal Position :

Dual

Lead Free :

Lead Free

Factory Lead Time :

14 Weeks

Power Dissipation-Max :

3.5W Ta 7.8W Tc

Turn-Off Delay Time :

80 ns

Time@Peak Reflow Temperature-Max (s) :

30

Nominal Vgs :

-2.5 V

Number of Elements :

1

Vgs (Max) :

±20V

ECCN Code :

EAR99

Operating Temperature :

-55°C~150°C TJ

RoHS Status :

ROHS3 Compliant

Terminal Form :

Gull wing

Mounting Type :

Surface Mount

Gate Charge (Qg) (Max) @ Vgs :

195nC @ 10V

Rise Time :

16ns

Rds On (Max) @ Id, Vgs :

5m Ω @ 15A, 10V

Height :

1.5mm

Pin Count :

8

Operating Mode :

ENHANCEMENT MODE

Packaging :

Tape and Reel (TR)

Radiation Hardening :

No

Length :

5mm

Number of Terminations :

8

Series :

TrenchFET®

Threshold Voltage :

-2.5V