SI4456DY-T1-GE3

Manufacturer :

Vishay

Product Category :

Transistors - FETs, MOSFETs - Single

Power Dissipation-Max :

3.5W Ta 7.8W Tc

Vgs(th) (Max) @ Id :

2.8V @ 250μA

DS Breakdown Voltage-Min :

40V

Drain to Source Voltage (Vdss) :

40V

Input Capacitance (Ciss) (Max) @ Vds :

5670pF @ 20V

Terminal Position :

Dual

Package / Case :

8-SOIC (0.154, 3.90mm Width)

Peak Reflow Temperature (Cel) :

260

Terminal Form :

Gull wing

Element Configuration :

Single

Power Dissipation :

3.5W

Number of Channels :

1

Drain Current-Max (Abs) (ID) :

23A

Pbfree Code :

yes

Mounting Type :

Surface Mount

JESD-609 Code :

e3

Drive Voltage (Max Rds On,Min Rds On) :

4.5V 10V

Series :

TrenchFET®

Radiation Hardening :

No

Number of Terminations :

8

Current - Continuous Drain (Id) @ 25°C :

33A Tc

Number of Pins :

8

Operating Mode :

ENHANCEMENT MODE

Number of Elements :

1

Mount :

Surface Mount

Continuous Drain Current (ID) :

3.3A

Gate to Source Voltage (Vgs) :

20V

Pulsed Drain Current-Max (IDM) :

70A

Factory Lead Time :

14 Weeks

Weight :

186.993455mg

Time@Peak Reflow Temperature-Max (s) :

30

RoHS Status :

ROHS3 Compliant

Pin Count :

8

Terminal Finish :

Matte Tin (Sn)

Published :

2015

Nominal Vgs :

2.8 V

Transistor Element Material :

SILICON

ECCN Code :

EAR99

Rds On (Max) @ Id, Vgs :

3.8m Ω @ 20A, 10V

Vgs (Max) :

±20V

Operating Temperature :

-55°C~150°C TJ

FET Type :

N-Channel

Gate Charge (Qg) (Max) @ Vgs :

122nC @ 10V

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Packaging :

Tape and Reel (TR)