SI4456DY-T1-E3

Manufacturer :

Vishay

Product Category :

Transistors - FETs, MOSFETs - Single

Gate Charge (Qg) (Max) @ Vgs :

122nC @ 10V

Continuous Drain Current (ID) :

33A

Weight :

186.993455mg

Mounting Type :

Surface Mount

Power Dissipation-Max :

3.5W Ta 7.8W Tc

FET Type :

N-Channel

Rise Time :

58ns

REACH SVHC :

Unknown

Supplier Device Package :

8-SO

Operating Temperature :

-55°C~150°C TJ

Input Capacitance :

5.67nF

Max Operating Temperature :

150°C

Rds On Max :

3.8 mΩ

Number of Elements :

1

Threshold Voltage :

2.8V

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Drain to Source Voltage (Vdss) :

40V

Width :

4mm

Lead Free :

Lead Free

Drain to Source Resistance :

3.8mOhm

Factory Lead Time :

14 Weeks

Gate to Source Voltage (Vgs) :

20V

Input Capacitance (Ciss) (Max) @ Vds :

5670pF @ 20V

Number of Pins :

8

Vgs(th) (Max) @ Id :

2.8V @ 250μA

RoHS Status :

ROHS3 Compliant

Height :

1.55mm

Drain to Source Breakdown Voltage :

40V

Turn On Delay Time :

21 ns

Resistance :

3.8mOhm

Packaging :

Tape and Reel (TR)

Rds On (Max) @ Id, Vgs :

3.8mOhm @ 20A, 10V

Vgs (Max) :

±20V

Drive Voltage (Max Rds On,Min Rds On) :

4.5V 10V

Length :

5mm

Turn-Off Delay Time :

55 ns

Radiation Hardening :

No

Min Operating Temperature :

-55°C

Current - Continuous Drain (Id) @ 25°C :

33A Tc

Element Configuration :

Single

Series :

TrenchFET®

Power Dissipation :

3.5W

Number of Channels :

1

Fall Time (Typ) :

8 ns

Package / Case :

8-SOIC (0.154, 3.90mm Width)

Published :

2011

Mount :

Surface Mount