SI4451DY-T1-E3
- Mfr.Part #
- SI4451DY-T1-E3
- Manufacturer
- Vishay
- Package / Case
- 8-SOIC (0.154, 3.90mm Width)
- Datasheet
- Download
- Description
- MOSFET P-CH 12V 10A 8SO
- Stock
- 10,319
- In Stock :
- 10,319
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- Manufacturer :
- Vishay
- Product Category :
- Transistors - FETs, MOSFETs - Single
- Number of Pins :
- 8
- Fall Time (Typ) :
- 125 ns
- Mounting Type :
- Surface Mount
- Terminal Form :
- Gull wing
- Radiation Hardening :
- No
- Pbfree Code :
- yes
- FET Type :
- P-Channel
- Power Dissipation-Max :
- 1.5W Ta
- Element Configuration :
- Single
- Lead Free :
- Lead Free
- Vgs(th) (Max) @ Id :
- 800mV @ 850μA
- Weight :
- 186.993455mg
- Operating Temperature :
- -55°C~150°C TJ
- Width :
- 4mm
- ECCN Code :
- EAR99
- Number of Terminations :
- 8
- Continuous Drain Current (ID) :
- 10A
- JESD-609 Code :
- e3
- Number of Channels :
- 1
- RoHS Status :
- ROHS3 Compliant
- Length :
- 5mm
- Drive Voltage (Max Rds On,Min Rds On) :
- 1.8V 4.5V
- Rise Time :
- 125ns
- Turn On Delay Time :
- 55 ns
- Time@Peak Reflow Temperature-Max (s) :
- 30
- Published :
- 2013
- Resistance :
- 8.25mOhm
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Height :
- 1.55mm
- Transistor Element Material :
- SILICON
- Drain to Source Voltage (Vdss) :
- 12V
- Mount :
- Surface Mount
- Current - Continuous Drain (Id) @ 25°C :
- 10A Ta
- Packaging :
- Tape and Reel (TR)
- Turn-Off Delay Time :
- 315 ns
- Operating Mode :
- ENHANCEMENT MODE
- Number of Elements :
- 1
- Factory Lead Time :
- 14 Weeks
- Series :
- TrenchFET®
- Terminal Position :
- Dual
- Vgs (Max) :
- ±8V
- Gate to Source Voltage (Vgs) :
- 8V
- Power Dissipation :
- 1.5W
- Transistor Application :
- SWITCHING
- Pin Count :
- 8
- Peak Reflow Temperature (Cel) :
- 260
- Package / Case :
- 8-SOIC (0.154, 3.90mm Width)
- Rds On (Max) @ Id, Vgs :
- 8.25m Ω @ 14A, 4.5V
- Contact Plating :
- Tin
- Gate Charge (Qg) (Max) @ Vgs :
- 120nC @ 4.5V
- Datasheets
- SI4451DY-T1-E3

P-Channel Tape & Reel (TR) 8.25m Ω @ 14A, 4.5V ±8V 120nC @ 4.5V 12V 8-SOIC (0.154, 3.90mm Width)
SI4451DY-T1-E3 Overview
In this device, the drain current (ID) is equal to the continuous current transistor can conduct.As a result of its turn-off delay time, which is 315 ns, the device has taken time to charge its input capacitance before drain current conduction begins.Input capacitance charge delays drain current conduction until the time it takes to charge input capacitance reaches 55 ns.Gate-source voltages (VGS) are voltages that fall across the gate-source terminal of FET transistors. VGS is sometimes 8VV.The transistor must receive a 12V drain to source voltage (Vdss) in order to function.In addition to reducing power consumption, this device uses drive voltage (1.8V 4.5V).
SI4451DY-T1-E3 Features
a continuous drain current (ID) of 10A
the turn-off delay time is 315 ns
a 12V drain to source voltage (Vdss)
SI4451DY-T1-E3 Applications
There are a lot of Vishay Siliconix
SI4451DY-T1-E3 applications of single MOSFETs transistors.
- DC/DC converters
- Power Tools
- Motor Drives and Uninterruptible Power Supples
- Synchronous Rectification
- Battery Protection Circuit
- Telecom 1 Sever Power Supplies
- Industrial Power Supplies
- PFC stages, hard switching PWM stages and resonant switching
- PWM stages for e.g. PC Silverbox, Adapter, LCD & PDP TV,
- Lighting, Server, Telecom and UPS.
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