SI4451DY-T1-E3

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Mfr.Part #
SI4451DY-T1-E3
Manufacturer
Vishay
Package / Case
8-SOIC (0.154, 3.90mm Width)
Datasheet
Download
Description
MOSFET P-CH 12V 10A 8SO
Stock
10,319
In Stock :
10,319

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Manufacturer :
Vishay
Product Category :
Transistors - FETs, MOSFETs - Single
Number of Pins :
8
Fall Time (Typ) :
125 ns
Mounting Type :
Surface Mount
Terminal Form :
Gull wing
Radiation Hardening :
No
Pbfree Code :
yes
FET Type :
P-Channel
Power Dissipation-Max :
1.5W Ta
Element Configuration :
Single
Lead Free :
Lead Free
Vgs(th) (Max) @ Id :
800mV @ 850μA
Weight :
186.993455mg
Operating Temperature :
-55°C~150°C TJ
Width :
4mm
ECCN Code :
EAR99
Number of Terminations :
8
Continuous Drain Current (ID) :
10A
JESD-609 Code :
e3
Number of Channels :
1
RoHS Status :
ROHS3 Compliant
Length :
5mm
Drive Voltage (Max Rds On,Min Rds On) :
1.8V 4.5V
Rise Time :
125ns
Turn On Delay Time :
55 ns
Time@Peak Reflow Temperature-Max (s) :
30
Published :
2013
Resistance :
8.25mOhm
Moisture Sensitivity Level (MSL) :
1 (Unlimited)
Height :
1.55mm
Transistor Element Material :
SILICON
Drain to Source Voltage (Vdss) :
12V
Mount :
Surface Mount
Current - Continuous Drain (Id) @ 25°C :
10A Ta
Packaging :
Tape and Reel (TR)
Turn-Off Delay Time :
315 ns
Operating Mode :
ENHANCEMENT MODE
Number of Elements :
1
Factory Lead Time :
14 Weeks
Series :
TrenchFET®
Terminal Position :
Dual
Vgs (Max) :
±8V
Gate to Source Voltage (Vgs) :
8V
Power Dissipation :
1.5W
Transistor Application :
SWITCHING
Pin Count :
8
Peak Reflow Temperature (Cel) :
260
Package / Case :
8-SOIC (0.154, 3.90mm Width)
Rds On (Max) @ Id, Vgs :
8.25m Ω @ 14A, 4.5V
Contact Plating :
Tin
Gate Charge (Qg) (Max) @ Vgs :
120nC @ 4.5V
Datasheets
SI4451DY-T1-E3
Introducing Transistors - FETs, MOSFETs - Single Vishay SI4451DY-T1-E3 from Chip IC,where excellence meets affordability. This product stands out with its Number of Pins:8, Mounting Type:Surface Mount, Operating Temperature:-55°C~150°C TJ, Number of Terminations:8, Number of Channels:1, Package / Case:8-SOIC (0.154, 3.90mm Width), SI4451DY-T1-E3 pinout, SI4451DY-T1-E3 datasheet PDF, SI4451DY-T1-E3 amp .Beyond Transistors - FETs, MOSFETs - Single Vishay SI4451DY-T1-E3 ,we also offer EPC2019, EPC2053, EPC2015C, Our vast inventory has you covered. Contact us now for immediate solutions.

Vishay SI4451DY-T1-E3


P-Channel Tape & Reel (TR) 8.25m Ω @ 14A, 4.5V ±8V 120nC @ 4.5V 12V 8-SOIC (0.154, 3.90mm Width)

SI4451DY-T1-E3 Overview


In this device, the drain current (ID) is equal to the continuous current transistor can conduct.As a result of its turn-off delay time, which is 315 ns, the device has taken time to charge its input capacitance before drain current conduction begins.Input capacitance charge delays drain current conduction until the time it takes to charge input capacitance reaches 55 ns.Gate-source voltages (VGS) are voltages that fall across the gate-source terminal of FET transistors. VGS is sometimes 8VV.The transistor must receive a 12V drain to source voltage (Vdss) in order to function.In addition to reducing power consumption, this device uses drive voltage (1.8V 4.5V).

SI4451DY-T1-E3 Features


a continuous drain current (ID) of 10A
the turn-off delay time is 315 ns
a 12V drain to source voltage (Vdss)


SI4451DY-T1-E3 Applications


There are a lot of Vishay Siliconix
SI4451DY-T1-E3 applications of single MOSFETs transistors.


  • DC/DC converters
  • Power Tools
  • Motor Drives and Uninterruptible Power Supples
  • Synchronous Rectification
  • Battery Protection Circuit
  • Telecom 1 Sever Power Supplies
  • Industrial Power Supplies
  • PFC stages, hard switching PWM stages and resonant switching
  • PWM stages for e.g. PC Silverbox, Adapter, LCD & PDP TV,
  • Lighting, Server, Telecom and UPS.
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