SI4448DY-T1-E3

Manufacturer :

Vishay

Product Category :

Transistors - FETs, MOSFETs - Single

Element Configuration :

Single

Operating Temperature :

-55°C~150°C TJ

JESD-609 Code :

e3

Number of Pins :

8

Published :

2016

Gate Charge (Qg) (Max) @ Vgs :

150nC @ 4.5V

Peak Reflow Temperature (Cel) :

260

Package / Case :

8-SOIC (0.154, 3.90mm Width)

Turn-Off Delay Time :

240 ns

Mounting Type :

Surface Mount

Turn On Delay Time :

38 ns

Drain to Source Breakdown Voltage :

12V

ECCN Code :

EAR99

Vgs (Max) :

±8V

Fall Time (Typ) :

33 ns

Vgs(th) (Max) @ Id :

1V @ 250μA

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Drive Voltage (Max Rds On,Min Rds On) :

1.8V 4.5V

Pin Count :

8

Height :

1.55mm

Mount :

Surface Mount

Power Dissipation :

3.5W

Power Dissipation-Max :

3.5W Ta 7.8W Tc

Time@Peak Reflow Temperature-Max (s) :

40

Transistor Application :

SWITCHING

Operating Mode :

ENHANCEMENT MODE

Number of Elements :

1

Series :

TrenchFET®

Terminal Finish :

MATTE TIN

Packaging :

Tape and Reel (TR)

Radiation Hardening :

No

Terminal Position :

Dual

Width :

4mm

Rds On (Max) @ Id, Vgs :

1.7m Ω @ 20A, 4.5V

Transistor Element Material :

SILICON

Length :

5mm

FET Type :

N-Channel

Input Capacitance (Ciss) (Max) @ Vds :

12350pF @ 6V

Terminal Form :

Gull wing

Current - Continuous Drain (Id) @ 25°C :

50A Tc

Weight :

186.993455mg

Rise Time :

22ns

RoHS Status :

ROHS3 Compliant

Number of Channels :

1

Number of Terminations :

8

Gate to Source Voltage (Vgs) :

8V

Continuous Drain Current (ID) :

32A