SI4446DY-T1-GE3
- Mfr.Part #
- SI4446DY-T1-GE3
- Manufacturer
- Vishay
- Package / Case
- 8-SOIC (0.154, 3.90mm Width)
- Datasheet
- Download
- Description
- MOSFET N-CH 40V 3.9A 8SO
- Stock
- 44,567
- In Stock :
- 44,567
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- Manufacturer :
- Vishay
- Product Category :
- Transistors - FETs, MOSFETs - Single
- Mounting Type :
- Surface Mount
- Operating Mode :
- ENHANCEMENT MODE
- Series :
- TrenchFET®
- Drive Voltage (Max Rds On,Min Rds On) :
- 4.5V 10V
- Packaging :
- Tape and Reel (TR)
- Rds On (Max) @ Id, Vgs :
- 40m Ω @ 5.2A, 10V
- Turn On Delay Time :
- 7 ns
- Fall Time (Typ) :
- 8 ns
- REACH SVHC :
- Unknown
- Peak Reflow Temperature (Cel) :
- 260
- Number of Pins :
- 8
- Turn-Off Delay Time :
- 27 ns
- DS Breakdown Voltage-Min :
- 40V
- Number of Elements :
- 1
- Continuous Drain Current (ID) :
- 3.9A
- Mount :
- Surface Mount
- ECCN Code :
- EAR99
- Power Dissipation-Max :
- 1.1W Ta
- Vgs (Max) :
- ±12V
- Gate Charge (Qg) (Max) @ Vgs :
- 12nC @ 4.5V
- Drain-source On Resistance-Max :
- 0.04Ohm
- Published :
- 2012
- Pbfree Code :
- yes
- Power Dissipation :
- 1.1W
- Gate to Source Voltage (Vgs) :
- 12V
- Terminal Position :
- Dual
- Element Configuration :
- Single
- Current - Continuous Drain (Id) @ 25°C :
- 3.9A Ta
- Input Capacitance (Ciss) (Max) @ Vds :
- 700pF @ 20V
- Threshold Voltage :
- 1.6V
- Drain to Source Voltage (Vdss) :
- 40V
- Pulsed Drain Current-Max (IDM) :
- 30A
- Terminal Form :
- Gull wing
- Time@Peak Reflow Temperature-Max (s) :
- 30
- Terminal Finish :
- PURE MATTE TIN
- JESD-609 Code :
- e3
- Package / Case :
- 8-SOIC (0.154, 3.90mm Width)
- Transistor Element Material :
- SILICON
- FET Type :
- N-Channel
- Radiation Hardening :
- No
- RoHS Status :
- ROHS3 Compliant
- Rise Time :
- 11ns
- Vgs(th) (Max) @ Id :
- 1.6V @ 250μA
- Number of Terminations :
- 8
- Operating Temperature :
- -55°C~150°C TJ
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Pin Count :
- 8
- Transistor Application :
- SWITCHING
- Datasheets
- SI4446DY-T1-GE3

N-Channel Tape & Reel (TR) 40m Ω @ 5.2A, 10V ±12V 700pF @ 20V 12nC @ 4.5V 40V 8-SOIC (0.154, 3.90mm Width)
SI4446DY-T1-GE3 Overview
A device's maximum input capacitance is 700pF @ 20V, but its input capacitance parameter, CI, is measured as the capacitance between the input terminals of the device with either input grounded.Its continuous drain current is 3.9A for this device. Drain current refers to the capacity of the device to conduct continuous current.A device's turn-off delay time is the amount of time it takes to charge its input capacitance before drain current conduction can begin, which is 27 ns.Its maximum pulsed drain current is 30A, which is also its maximum rating peak drainage current.Before drain current conduction begins, the device's input capacitance must be charged, so the delay time is 7 ns.Generally, the gate-source voltage (VGS) of a FET transistor is the voltage across its gate-source terminal, which is 12V.An electrical device's threshold voltage specifies when any of its operations will begin, and this transistor has a threshold voltage of 1.6V.For normal operation, maintain the DS breakdown voltage above 40V.To operate this transistor, you need to apply a 40V drain to source voltage (Vdss).This device uses no drive voltage (4.5V 10V) to reduce its overall power consumption.
SI4446DY-T1-GE3 Features
a continuous drain current (ID) of 3.9A
the turn-off delay time is 27 ns
based on its rated peak drain current 30A.
a threshold voltage of 1.6V
a 40V drain to source voltage (Vdss)
SI4446DY-T1-GE3 Applications
There are a lot of Vishay Siliconix
SI4446DY-T1-GE3 applications of single MOSFETs transistors.
- Power Tools
- Motor Drives and Uninterruptible Power Supples
- Synchronous Rectification
- Battery Protection Circuit
- Telecom 1 Sever Power Supplies
- Industrial Power Supplies
- PFC stages, hard switching PWM stages and resonant switching
- PWM stages for e.g. PC Silverbox, Adapter, LCD & PDP TV,
- Lighting, Server, Telecom and UPS.
- DC-to-DC converters
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