SI4446DY-T1-E3

Manufacturer :

Vishay

Product Category :

Transistors - FETs, MOSFETs - Single

Series :

TrenchFET®

Pulsed Drain Current-Max (IDM) :

30A

Radiation Hardening :

No

REACH SVHC :

No SVHC

Time@Peak Reflow Temperature-Max (s) :

40

Transistor Application :

SWITCHING

Continuous Drain Current (ID) :

5.2A

FET Type :

N-Channel

Number of Pins :

8

Vgs (Max) :

±12V

Mounting Type :

Surface Mount

Number of Elements :

1

JESD-609 Code :

e3

RoHS Status :

ROHS3 Compliant

Number of Terminations :

8

Element Configuration :

Single

Mount :

Surface Mount

Terminal Position :

Dual

Operating Mode :

ENHANCEMENT MODE

Peak Reflow Temperature (Cel) :

260

Vgs(th) (Max) @ Id :

1.6V @ 250μA

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Lead Free :

Lead Free

Power Dissipation :

1.1W

Transistor Element Material :

SILICON

Rise Time :

11ns

Resistance :

40mOhm

Gate to Source Voltage (Vgs) :

12V

Input Capacitance (Ciss) (Max) @ Vds :

700pF @ 20V

Current - Continuous Drain (Id) @ 25°C :

3.9A Ta

Fall Time (Typ) :

11 ns

Rds On (Max) @ Id, Vgs :

40m Ω @ 5.2A, 10V

Terminal Form :

Gull wing

Operating Temperature :

-55°C~150°C TJ

Drive Voltage (Max Rds On,Min Rds On) :

4.5V 10V

Turn-Off Delay Time :

27 ns

Published :

2013

Pbfree Code :

yes

Packaging :

Tape and Reel (TR)

Turn On Delay Time :

7 ns

Nominal Vgs :

1.6 V

Drain Current-Max (Abs) (ID) :

3.9A

Drain to Source Breakdown Voltage :

40V

Package / Case :

8-SOIC (0.154, 3.90mm Width)

Pin Count :

8

Gate Charge (Qg) (Max) @ Vgs :

12nC @ 4.5V

Power Dissipation-Max :

1.1W Ta

Terminal Finish :

Matte Tin (Sn)

Threshold Voltage :

1.6V

ECCN Code :

EAR99