SI4442DY-T1-GE3

Manufacturer :

Vishay

Product Category :

Transistors - FETs, MOSFETs - Single

Rise Time :

11ns

Terminal Finish :

PURE MATTE TIN

Package / Case :

8-SOIC (0.154, 3.90mm Width)

Gate Charge (Qg) (Max) @ Vgs :

50nC @ 4.5V

Width :

4mm

Turn On Delay Time :

17 ns

Drain-source On Resistance-Max :

0.0045ohm

Operating Temperature :

-55°C~150°C TJ

Gate to Source Voltage (Vgs) :

12V

Power Dissipation-Max :

1.6W Ta

Drain to Source Breakdown Voltage :

30V

Radiation Hardening :

No

Published :

2009

Turn-Off Delay Time :

125 ns

Operating Mode :

ENHANCEMENT MODE

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

FET Type :

N-Channel

Terminal Form :

Gull wing

Terminal Position :

Dual

RoHS Status :

ROHS3 Compliant

Vgs(th) (Max) @ Id :

1.5V @ 250µA

Number of Terminations :

8

Factory Lead Time :

14 Weeks

Transistor Element Material :

SILICON

Peak Reflow Temperature (Cel) :

260

Number of Channels :

1

Number of Pins :

8

Weight :

506.605978mg

Element Configuration :

Single

Fall Time (Typ) :

47 ns

Drive Voltage (Max Rds On,Min Rds On) :

2.5V 10V

Pin Count :

8

Mount :

Surface Mount

Continuous Drain Current (ID) :

15A

Current - Continuous Drain (Id) @ 25°C :

15A Ta

Length :

5mm

Packaging :

Tape and Reel (TR)

Series :

TrenchFET®

Mounting Type :

Surface Mount

ECCN Code :

EAR99

Vgs (Max) :

±12V

Height :

1.55mm

Time@Peak Reflow Temperature-Max (s) :

30

Rds On (Max) @ Id, Vgs :

4.5m Ω @ 22A, 10V

JESD-609 Code :

e3

Number of Elements :

1