SI4442DY-T1-E3

Manufacturer :

Vishay

Product Category :

Transistors - FETs, MOSFETs - Single

ECCN Code :

EAR99

Peak Reflow Temperature (Cel) :

260

Number of Channels :

1

Lead Free :

Lead Free

Terminal Position :

Dual

JESD-609 Code :

e3

Mount :

Surface Mount

Continuous Drain Current (ID) :

22A

Resistance :

4.5mOhm

RoHS Status :

ROHS3 Compliant

Packaging :

Tape and Reel (TR)

Power Dissipation :

1.6W

Length :

5mm

Height :

1.55mm

Package / Case :

8-SOIC (0.154, 3.90mm Width)

Vgs(th) (Max) @ Id :

1.5V @ 250µA

Published :

2016

Dual Supply Voltage :

30V

Mounting Type :

Surface Mount

Turn On Delay Time :

17 ns

Transistor Element Material :

SILICON

Series :

TrenchFET®

Element Configuration :

Single

Time@Peak Reflow Temperature-Max (s) :

40

Number of Elements :

1

REACH SVHC :

No SVHC

Operating Temperature :

-55°C~150°C TJ

Radiation Hardening :

No

Vgs (Max) :

±12V

Terminal Form :

Gull wing

Nominal Vgs :

1.5 V

FET Type :

N-Channel

Gate Charge (Qg) (Max) @ Vgs :

50nC @ 4.5V

Weight :

506.605978mg

Termination :

SMD/SMT

Rise Time :

11ns

Power Dissipation-Max :

1.6W Ta

Turn-Off Delay Time :

125 ns

Drain to Source Breakdown Voltage :

30V

Number of Pins :

8

Pin Count :

8

Current - Continuous Drain (Id) @ 25°C :

15A Ta

Terminal Finish :

MATTE TIN

Drive Voltage (Max Rds On,Min Rds On) :

2.5V 10V

Gate to Source Voltage (Vgs) :

12V

Width :

4mm

Operating Mode :

ENHANCEMENT MODE

Fall Time (Typ) :

11 ns

Threshold Voltage :

1.5V

Rds On (Max) @ Id, Vgs :

4.5m Ω @ 22A, 10V

Factory Lead Time :

14 Weeks

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Number of Terminations :

8