SI4435FDY-T1-GE3

Manufacturer :

Vishay

Product Category :

Transistors - FETs, MOSFETs - Single

Vgs(th) (Max) @ Id :

2.2V @ 250µA

Gate to Source Voltage (Vgs) :

20V

Drain to Source Voltage (Vdss) :

30V

Current - Continuous Drain (Id) @ 25°C :

12.6A Tc

Mounting Type :

Surface Mount

Factory Lead Time :

14 Weeks

Input Capacitance (Ciss) (Max) @ Vds :

1500pF @ 15V

Max Junction Temperature (Tj) :

150°C

RoHS Status :

ROHS3 Compliant

Series :

TrenchFET® Gen III

Continuous Drain Current (ID) :

-8.6A

Packaging :

Tape and Reel (TR)

Power Dissipation-Max :

4.8W Tc

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Power Dissipation :

2.2W

Peak Reflow Temperature (Cel) :

NOT SPECIFIED

ECCN Code :

EAR99

Turn-Off Delay Time :

23 ns

Height :

1.75mm

Vgs (Max) :

±20V

Published :

2018

Operating Temperature :

-55°C~150°C TJ

Gate Charge (Qg) (Max) @ Vgs :

42nC @ 10V

Drain to Source Breakdown Voltage :

-30V

Package / Case :

8-SOIC (0.154, 3.90mm Width)

Rds On (Max) @ Id, Vgs :

19m Ω @ 9A, 10V

Turn On Delay Time :

9 ns

Drive Voltage (Max Rds On,Min Rds On) :

4.5V 10V

FET Type :

P-Channel

Time@Peak Reflow Temperature-Max (s) :

NOT SPECIFIED

Number of Channels :

1