SI4435DYTRPBF

Manufacturer :

Infineon Technologies

Product Category :

Transistors - FETs, MOSFETs - Single

Rds On (Max) @ Id, Vgs :

20m Ω @ 8A, 10V

Threshold Voltage :

-1V

Turn-Off Delay Time :

130 ns

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Packaging :

Tape and Reel (TR)

Contact Plating :

Tin

Number of Terminations :

8

Series :

HEXFET®

Continuous Drain Current (ID) :

-8A

Terminal Position :

Dual

ECCN Code :

EAR99

Height :

1.75mm

Power Dissipation-Max :

2.5W Ta

Radiation Hardening :

No

Transistor Application :

SWITCHING

Gate to Source Voltage (Vgs) :

20V

Lead Free :

Contains Lead, Lead Free

Resistance :

20mOhm

Input Capacitance (Ciss) (Max) @ Vds :

2320pF @ 15V

Termination :

SMD/SMT

Drive Voltage (Max Rds On,Min Rds On) :

4.5V 10V

Rise Time :

17ns

FET Type :

P-Channel

REACH SVHC :

No SVHC

Dual Supply Voltage :

-30V

Drain Current-Max (Abs) (ID) :

8A

Package / Case :

8-SOIC (0.154, 3.90mm Width)

Vgs (Max) :

±20V

Fall Time (Typ) :

31 ns

Number of Pins :

8

RoHS Status :

ROHS3 Compliant

Operating Temperature :

-55°C~150°C TJ

Operating Mode :

ENHANCEMENT MODE

Turn On Delay Time :

16 ns

Mount :

Surface Mount

Width :

3.9878mm

Published :

1999

Current Rating :

-8A

Mounting Type :

Surface Mount

Transistor Element Material :

SILICON

Drain to Source Breakdown Voltage :

-30V

Row Spacing :

6.3 mm

Pulsed Drain Current-Max (IDM) :

50A

Additional Feature :

ULTRA LOW RESISTANCE

Length :

4.9784mm

Factory Lead Time :

12 Weeks

Element Configuration :

Single

Current - Continuous Drain (Id) @ 25°C :

8A Tc

Vgs(th) (Max) @ Id :

1V @ 250μA

Voltage - Rated DC :

-30V

Number of Elements :

1

Drain to Source Voltage (Vdss) :

30V

Power Dissipation :

2.5W

Max Junction Temperature (Tj) :

150°C

Number of Channels :

1

Nominal Vgs :

-1 V

Recovery Time :

51 ns

Terminal Form :

Gull wing

Gate Charge (Qg) (Max) @ Vgs :

60nC @ 10V