SI4435DYTR

Manufacturer :

Infineon Technologies

Product Category :

Transistors - FETs, MOSFETs - Single

Terminal Form :

Gull wing

Rds On (Max) @ Id, Vgs :

20m Ω @ 8A, 10V

Drain-source On Resistance-Max :

0.02Ohm

Vgs(th) (Max) @ Id :

1V @ 250μA

Configuration :

SINGLE WITH BUILT-IN DIODE

Gate Charge (Qg) (Max) @ Vgs :

60nC @ 10V

Package / Case :

8-SOIC (0.154, 3.90mm Width)

Surface Mount :

yes

Vgs (Max) :

±20V

Series :

HEXFET®

Peak Reflow Temperature (Cel) :

NOT SPECIFIED

Number of Elements :

1

Drain to Source Voltage (Vdss) :

30V

Power Dissipation-Max :

2.5W Ta

DS Breakdown Voltage-Min :

30V

Additional Feature :

ULTRA LOW RESISTANCE

Input Capacitance (Ciss) (Max) @ Vds :

2320pF @ 15V

HTS Code :

8541.29.00.95

Drive Voltage (Max Rds On,Min Rds On) :

4.5V 10V

Mounting Type :

Surface Mount

JEDEC-95 Code :

MS-012AA

Packaging :

Tape and Reel (TR)

Transistor Element Material :

SILICON

RoHS Status :

Non-RoHS Compliant

ECCN Code :

EAR99

Number of Terminations :

8

Time@Peak Reflow Temperature-Max (s) :

NOT SPECIFIED

Pulsed Drain Current-Max (IDM) :

50A

FET Type :

P-Channel

JESD-30 Code :

R-PDSO-G8

Operating Temperature :

-55°C~150°C TJ

Operating Mode :

ENHANCEMENT MODE

Drain Current-Max (Abs) (ID) :

8A

Transistor Application :

SWITCHING

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Terminal Position :

Dual

Current - Continuous Drain (Id) @ 25°C :

8A Tc

Published :

1999