SI4435DYPBF

Manufacturer :

Infineon Technologies

Product Category :

Transistors - FETs, MOSFETs - Single

Configuration :

SINGLE WITH BUILT-IN DIODE

Transistor Application :

SWITCHING

Rds On (Max) @ Id, Vgs :

20m Ω @ 8A, 10V

Vgs(th) (Max) @ Id :

1V @ 250μA

Mounting Type :

Surface Mount

Terminal Form :

Gull wing

Power Dissipation-Max :

2.5W Ta

Vgs (Max) :

±20V

RoHS Status :

ROHS3 Compliant

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

JESD-609 Code :

e3

Terminal Finish :

Matte Tin (Sn)

JEDEC-95 Code :

MS-012AA

Series :

HEXFET®

ECCN Code :

EAR99

JESD-30 Code :

R-PDSO-G8

Packaging :

Tube

Surface Mount :

yes

Operating Mode :

ENHANCEMENT MODE

Qualification Status :

Not Qualified

Drive Voltage (Max Rds On,Min Rds On) :

4.5V 10V

Published :

1999

Peak Reflow Temperature (Cel) :

260

Current - Continuous Drain (Id) @ 25°C :

8A Tc

Additional Feature :

ULTRA LOW RESISTANCE

Transistor Element Material :

SILICON

Drain-source On Resistance-Max :

0.02Ohm

Input Capacitance (Ciss) (Max) @ Vds :

2320pF @ 15V

Terminal Position :

Dual

Drain Current-Max (Abs) (ID) :

8A

Package / Case :

8-SOIC (0.154, 3.90mm Width)

Operating Temperature :

-55°C~150°C TJ

Pulsed Drain Current-Max (IDM) :

50A

Gate Charge (Qg) (Max) @ Vgs :

60nC @ 10V

Drain to Source Voltage (Vdss) :

30V

Number of Elements :

1

FET Type :

P-Channel

Number of Terminations :

8

DS Breakdown Voltage-Min :

30V

Time@Peak Reflow Temperature-Max (s) :

30