SI4435DY

Manufacturer :

onsemi

Product Category :

Transistors - FETs, MOSFETs - Single

Package / Case :

8-SOIC (0.154, 3.90mm Width)

Current - Continuous Drain (Id) @ 25°C :

8.8A Ta

Turn-Off Delay Time :

42 ns

Radiation Hardening :

No

Dual Supply Voltage :

-30V

Gate Charge (Qg) (Max) @ Vgs :

24nC @ 5V

JESD-609 Code :

e4

Height :

1.57mm

Power Dissipation :

2.5W

Length :

4.9mm

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Terminal Finish :

Nickel/Palladium/Gold (Ni/Pd/Au)

Continuous Drain Current (ID) :

-8.8A

Vgs (Max) :

±20V

Operating Temperature :

-55°C~175°C TJ

ECCN Code :

EAR99

Terminal Form :

Gull wing

Pbfree Code :

yes

Transistor Element Material :

SILICON

Packaging :

Tape and Reel (TR)

RoHS Status :

ROHS3 Compliant

Lead Free :

Lead Free

Number of Pins :

8

REACH SVHC :

No SVHC

Factory Lead Time :

18 Weeks

Lifecycle Status :

ACTIVE (Last Updated: 15 hours ago)

Element Configuration :

Single

FET Type :

P-Channel

Drive Voltage (Max Rds On,Min Rds On) :

4.5V 10V

Transistor Application :

SWITCHING

Threshold Voltage :

-1.7V

Input Capacitance (Ciss) (Max) @ Vds :

1604pF @ 15V

Operating Mode :

ENHANCEMENT MODE

Rise Time :

13.5ns

Gate to Source Voltage (Vgs) :

20V

Width :

3.9mm

Number of Terminations :

8

Nominal Vgs :

-1.7 V

Power Dissipation-Max :

2.5W Ta

Drain to Source Breakdown Voltage :

-30V

Turn On Delay Time :

16 ns

Fall Time (Typ) :

25 ns

Resistance :

20mOhm

Termination :

SMD/SMT

Terminal Position :

Dual

Number of Elements :

1

Series :

PowerTrench®

Current Rating :

-8.8A

Vgs(th) (Max) @ Id :

3V @ 250µA

Rds On (Max) @ Id, Vgs :

20m Ω @ 8.8A, 10V

Weight :

130mg

Mount :

Surface Mount

Mounting Type :

Surface Mount

Drain to Source Voltage (Vdss) :

30V

Published :

2001

Voltage - Rated DC :

-30V