SI4435DDY-T1-GE3

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Mfr.Part #
SI4435DDY-T1-GE3
Manufacturer
Vishay
Package / Case
8-SOIC (0.154, 3.90mm Width)
Datasheet
Download
Description
MOSFET P-CH 30V 11.4A 8SO
Stock
1,938,986
In Stock :
1,938,986

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Manufacturer :
Vishay
Product Category :
Transistors - FETs, MOSFETs - Single
Resistance :
24mOhm
Published :
2016
Fall Time (Typ) :
16 ns
Radiation Hardening :
No
Drain to Source Breakdown Voltage :
-30V
Factory Lead Time :
14 Weeks
Peak Reflow Temperature (Cel) :
260
Number of Channels :
1
Number of Terminations :
8
Weight :
186.993455mg
Operating Temperature :
-55°C~150°C TJ
Package / Case :
8-SOIC (0.154, 3.90mm Width)
RoHS Status :
ROHS3 Compliant
Width :
4mm
Continuous Drain Current (ID) :
-8.1A
Mount :
Surface Mount
Turn-Off Delay Time :
45 ns
Threshold Voltage :
-3V
Drive Voltage (Max Rds On,Min Rds On) :
4.5V 10V
Transistor Element Material :
SILICON
Time@Peak Reflow Temperature-Max (s) :
30
Pbfree Code :
yes
Rds On (Max) @ Id, Vgs :
24m Ω @ 9.1A, 10V
Terminal Form :
Gull wing
Operating Mode :
ENHANCEMENT MODE
Pin Count :
8
Gate to Source Voltage (Vgs) :
20V
Input Capacitance (Ciss) (Max) @ Vds :
1350pF @ 15V
ECCN Code :
EAR99
Lead Free :
Lead Free
Length :
5mm
Power Dissipation :
2.5W
Turn On Delay Time :
10 ns
Number of Elements :
1
Current - Continuous Drain (Id) @ 25°C :
11.4A Tc
Gate Charge (Qg) (Max) @ Vgs :
50nC @ 10V
Max Junction Temperature (Tj) :
150°C
Transistor Application :
SWITCHING
FET Type :
P-Channel
Height :
1.75mm
Series :
TrenchFET®
Vgs(th) (Max) @ Id :
3V @ 250µA
Moisture Sensitivity Level (MSL) :
1 (Unlimited)
Drain to Source Voltage (Vdss) :
30V
Power Dissipation-Max :
2.5W Ta 5W Tc
Terminal Position :
Dual
Vgs (Max) :
±20V
Mounting Type :
Surface Mount
REACH SVHC :
Unknown
Number of Pins :
8
Packaging :
Tape and Reel (TR)
Element Configuration :
Single
JESD-609 Code :
e3
Contact Plating :
Tin
Rise Time :
35ns
Datasheets
SI4435DDY-T1-GE3
Introducing Transistors - FETs, MOSFETs - Single Vishay SI4435DDY-T1-GE3 from Chip IC,where excellence meets affordability. This product stands out with its Number of Channels:1, Number of Terminations:8, Operating Temperature:-55°C~150°C TJ, Package / Case:8-SOIC (0.154, 3.90mm Width), Mounting Type:Surface Mount, Number of Pins:8, SI4435DDY-T1-GE3 pinout, SI4435DDY-T1-GE3 datasheet PDF, SI4435DDY-T1-GE3 amp .Beyond Transistors - FETs, MOSFETs - Single Vishay SI4435DDY-T1-GE3 ,we also offer EPC2019, EPC2053, EPC2015C, Our vast inventory has you covered. Contact us now for immediate solutions.

Vishay SI4435DDY-T1-GE3


P-Channel Tape & Reel (TR) 24m Ω @ 9.1A, 10V ±20V 1350pF @ 15V 50nC @ 10V 30V 8-SOIC (0.154, 3.90mm Width)

SI4435DDY-T1-GE3 Overview


The maximum input capacitance of this device is 1350pF @ 15V, because the input capacitance of an op amp is defined as the difference between the input terminals with one input grounded.Continuous drain current (ID) is the maximum continuous current (ID) the device can conduct, and it is -8.1A.When VGS=-30V, and ID flows to VDS at -30VVDS, the drain-source breakdown voltage is -30V in this device.Before drain current conduction can begin, the device's turn-off delay time must be charged up to full capacitance. This value is 45 ns.During device turn-on, the input capacitance must be charged for a period of time before drain current conduction can begin, so its delay time is 10 ns seconds.Single MOSFETs transistor is the voltage across the gate-source terminal of a transistor that determines the gate-source voltage, VGS.This transistor's threshold voltage is -3V volts, which indicates that a transistor is ready to perform any of its operations at that voltage.The drain-to-source voltage (Vdss) of this transistor needs to be at 30V in order to operate.Using drive voltage (4.5V 10V), this device helps reduce its power consumption.

SI4435DDY-T1-GE3 Features


a continuous drain current (ID) of -8.1A
a drain-to-source breakdown voltage of -30V voltage
the turn-off delay time is 45 ns
a threshold voltage of -3V
a 30V drain to source voltage (Vdss)


SI4435DDY-T1-GE3 Applications


There are a lot of Vishay Siliconix
SI4435DDY-T1-GE3 applications of single MOSFETs transistors.


  • Micro Solar Inverter
  • DC/DC converters
  • Power Tools
  • Motor Drives and Uninterruptible Power Supples
  • Synchronous Rectification
  • Battery Protection Circuit
  • Telecom 1 Sever Power Supplies
  • Industrial Power Supplies
  • PFC stages, hard switching PWM stages and resonant switching
  • PWM stages for e.g. PC Silverbox, Adapter, LCD & PDP TV,
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