SI4435DDY-T1-E3

Manufacturer :

Vishay

Product Category :

Transistors - FETs, MOSFETs - Single

Vgs(th) (Max) @ Id :

3V @ 250µA

Height :

1.5mm

Mounting Type :

Surface Mount

Mount :

Surface Mount

Package / Case :

8-SOIC (0.154, 3.90mm Width)

Gate to Source Voltage (Vgs) :

20V

Threshold Voltage :

-3V

Lead Free :

Lead Free

Transistor Application :

SWITCHING

Drain to Source Voltage (Vdss) :

30V

Number of Elements :

1

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Resistance :

24mOhm

JESD-609 Code :

e3

Current - Continuous Drain (Id) @ 25°C :

11.4A Tc

Factory Lead Time :

14 Weeks

Operating Temperature :

-55°C~150°C TJ

Contact Plating :

Tin

Vgs (Max) :

±20V

Power Dissipation-Max :

2.5W Ta 5W Tc

Operating Mode :

ENHANCEMENT MODE

Weight :

186.993455mg

Number of Terminations :

8

Continuous Drain Current (ID) :

-11.4A

Turn-Off Delay Time :

40 ns

Radiation Hardening :

No

Peak Reflow Temperature (Cel) :

260

Number of Pins :

8

ECCN Code :

EAR99

Width :

4mm

FET Type :

P-Channel

Drive Voltage (Max Rds On,Min Rds On) :

4.5V 10V

Rds On (Max) @ Id, Vgs :

24m Ω @ 9.1A, 10V

Length :

5mm

Transistor Element Material :

SILICON

Pin Count :

8

Rise Time :

35ns

Terminal Position :

Dual

Drain to Source Breakdown Voltage :

-30V

Pbfree Code :

yes

Time@Peak Reflow Temperature-Max (s) :

30

Packaging :

Tape and Reel (TR)

Published :

2017

Power Dissipation :

2.5W

Terminal Form :

Gull wing

Element Configuration :

Single

Series :

TrenchFET®

Turn On Delay Time :

42 ns

REACH SVHC :

No SVHC

Input Capacitance (Ciss) (Max) @ Vds :

1350pF @ 15V

Gate Charge (Qg) (Max) @ Vgs :

50nC @ 10V

Fall Time (Typ) :

16 ns

RoHS Status :

ROHS3 Compliant

Number of Channels :

1