SI4435BDY-T1-E3

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Mfr.Part #
SI4435BDY-T1-E3
Manufacturer
Vishay
Package / Case
8-SOIC (0.154, 3.90mm Width)
Datasheet
Download
Description
MOSFET P-CH 30V 7A 8SO
Stock
42,445
In Stock :
42,445

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Manufacturer :
Vishay
Product Category :
Transistors - FETs, MOSFETs - Single
Mount :
Surface Mount
Packaging :
Tape and Reel (TR)
Series :
TrenchFET®
Vgs(th) (Max) @ Id :
3V @ 250µA
Gate to Source Voltage (Vgs) :
20V
RoHS Status :
ROHS3 Compliant
FET Type :
P-Channel
Operating Temperature :
-55°C~150°C TJ
Drive Voltage (Max Rds On,Min Rds On) :
4.5V 10V
Lead Free :
Lead Free
Drain to Source Breakdown Voltage :
-30V
Rds On (Max) @ Id, Vgs :
20mOhm @ 9.1A, 10V
Number of Elements :
1
Vgs (Max) :
±20V
Continuous Drain Current (ID) :
7A
Power Dissipation-Max :
1.5W Ta
Drain to Source Voltage (Vdss) :
30V
Current - Continuous Drain (Id) @ 25°C :
7A Ta
Length :
5mm
Package / Case :
8-SOIC (0.154, 3.90mm Width)
Power Dissipation :
1.5W
Turn-Off Delay Time :
110 ns
Rds On Max :
20 mΩ
Number of Pins :
8
Rise Time :
15ns
Number of Channels :
1
Width :
4mm
Height :
1.55mm
Gate Charge (Qg) (Max) @ Vgs :
70nC @ 10V
Fall Time (Typ) :
15 ns
Element Configuration :
Single
Supplier Device Package :
8-SO
Weight :
186.993455mg
Moisture Sensitivity Level (MSL) :
1 (Unlimited)
Max Operating Temperature :
150°C
Mounting Type :
Surface Mount
Drain to Source Resistance :
20mOhm
Min Operating Temperature :
-55°C
Published :
2015
Turn On Delay Time :
10 ns
Datasheets
SI4435BDY-T1-E3
Introducing Transistors - FETs, MOSFETs - Single Vishay SI4435BDY-T1-E3 from Chip IC,where excellence meets affordability. This product stands out with its Operating Temperature:-55°C~150°C TJ, Package / Case:8-SOIC (0.154, 3.90mm Width), Number of Pins:8, Number of Channels:1, Mounting Type:Surface Mount, SI4435BDY-T1-E3 pinout, SI4435BDY-T1-E3 datasheet PDF, SI4435BDY-T1-E3 amp .Beyond Transistors - FETs, MOSFETs - Single Vishay SI4435BDY-T1-E3 ,we also offer EPC2019, EPC2053, EPC2015C, Our vast inventory has you covered. Contact us now for immediate solutions.

Vishay SI4435BDY-T1-E3


P-Channel Tape & Reel (TR) 20mOhm @ 9.1A, 10V ±20V 70nC @ 10V 30V 8-SOIC (0.154, 3.90mm Width)

SI4435BDY-T1-E3 Overview


This device's continuous drain current (ID) is 7A, which represents the maximum continuous current it can conduct.In this device, the drain-source breakdown voltage is -30V and the drain-source breakdown voltage is the VDS at which a specified value of ID flows.Its turn-off delay time is 110 ns, which is the time to charge the device's input capacitance before drain current conduction begins.When a gate-to-source voltage (VGS) is applied to bias a MOSFET to the on state, the resistance between the drain and the source of the device is 20mOhm.Input capacitance charging takes time before drain current conduction begins, so the turn-on delay time is 10 ns.Gate-source voltage, or VGS, is the voltage across a FET transistor's gate-source terminal, and can be 20V volts.This transistor requires a 30V drain to source voltage (Vdss).This device reduces its overall power consumption by using drive voltage (4.5V 10V).

SI4435BDY-T1-E3 Features


a continuous drain current (ID) of 7A
a drain-to-source breakdown voltage of -30V voltage
the turn-off delay time is 110 ns
single MOSFETs transistor is 20mOhm
a 30V drain to source voltage (Vdss)


SI4435BDY-T1-E3 Applications


There are a lot of Vishay Siliconix
SI4435BDY-T1-E3 applications of single MOSFETs transistors.


  • Consumer Appliances
  • Lighting
  • Uninterruptible Power Supply
  • AC-DC Power Supply
  • Synchronous Rectification for ATX 1 Server I Telecom PSU
  • Motor drives and Uninterruptible Power Supplies
  • Micro Solar Inverter
  • DC/DC converters
  • Power Tools
  • Motor Drives and Uninterruptible Power Supples
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