SI4435BDY-T1-E3
- Mfr.Part #
- SI4435BDY-T1-E3
- Manufacturer
- Vishay
- Package / Case
- 8-SOIC (0.154, 3.90mm Width)
- Datasheet
- Download
- Description
- MOSFET P-CH 30V 7A 8SO
- Stock
- 42,445
- In Stock :
- 42,445
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- Manufacturer :
- Vishay
- Product Category :
- Transistors - FETs, MOSFETs - Single
- Mount :
- Surface Mount
- Packaging :
- Tape and Reel (TR)
- Series :
- TrenchFET®
- Vgs(th) (Max) @ Id :
- 3V @ 250µA
- Gate to Source Voltage (Vgs) :
- 20V
- RoHS Status :
- ROHS3 Compliant
- FET Type :
- P-Channel
- Operating Temperature :
- -55°C~150°C TJ
- Drive Voltage (Max Rds On,Min Rds On) :
- 4.5V 10V
- Lead Free :
- Lead Free
- Drain to Source Breakdown Voltage :
- -30V
- Rds On (Max) @ Id, Vgs :
- 20mOhm @ 9.1A, 10V
- Number of Elements :
- 1
- Vgs (Max) :
- ±20V
- Continuous Drain Current (ID) :
- 7A
- Power Dissipation-Max :
- 1.5W Ta
- Drain to Source Voltage (Vdss) :
- 30V
- Current - Continuous Drain (Id) @ 25°C :
- 7A Ta
- Length :
- 5mm
- Package / Case :
- 8-SOIC (0.154, 3.90mm Width)
- Power Dissipation :
- 1.5W
- Turn-Off Delay Time :
- 110 ns
- Rds On Max :
- 20 mΩ
- Number of Pins :
- 8
- Rise Time :
- 15ns
- Number of Channels :
- 1
- Width :
- 4mm
- Height :
- 1.55mm
- Gate Charge (Qg) (Max) @ Vgs :
- 70nC @ 10V
- Fall Time (Typ) :
- 15 ns
- Element Configuration :
- Single
- Supplier Device Package :
- 8-SO
- Weight :
- 186.993455mg
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Max Operating Temperature :
- 150°C
- Mounting Type :
- Surface Mount
- Drain to Source Resistance :
- 20mOhm
- Min Operating Temperature :
- -55°C
- Published :
- 2015
- Turn On Delay Time :
- 10 ns
- Datasheets
- SI4435BDY-T1-E3

P-Channel Tape & Reel (TR) 20mOhm @ 9.1A, 10V ±20V 70nC @ 10V 30V 8-SOIC (0.154, 3.90mm Width)
SI4435BDY-T1-E3 Overview
This device's continuous drain current (ID) is 7A, which represents the maximum continuous current it can conduct.In this device, the drain-source breakdown voltage is -30V and the drain-source breakdown voltage is the VDS at which a specified value of ID flows.Its turn-off delay time is 110 ns, which is the time to charge the device's input capacitance before drain current conduction begins.When a gate-to-source voltage (VGS) is applied to bias a MOSFET to the on state, the resistance between the drain and the source of the device is 20mOhm.Input capacitance charging takes time before drain current conduction begins, so the turn-on delay time is 10 ns.Gate-source voltage, or VGS, is the voltage across a FET transistor's gate-source terminal, and can be 20V volts.This transistor requires a 30V drain to source voltage (Vdss).This device reduces its overall power consumption by using drive voltage (4.5V 10V).
SI4435BDY-T1-E3 Features
a continuous drain current (ID) of 7A
a drain-to-source breakdown voltage of -30V voltage
the turn-off delay time is 110 ns
single MOSFETs transistor is 20mOhm
a 30V drain to source voltage (Vdss)
SI4435BDY-T1-E3 Applications
There are a lot of Vishay Siliconix
SI4435BDY-T1-E3 applications of single MOSFETs transistors.
- Consumer Appliances
- Lighting
- Uninterruptible Power Supply
- AC-DC Power Supply
- Synchronous Rectification for ATX 1 Server I Telecom PSU
- Motor drives and Uninterruptible Power Supplies
- Micro Solar Inverter
- DC/DC converters
- Power Tools
- Motor Drives and Uninterruptible Power Supples
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