SI4434DY-T1-GE3

Manufacturer :

Vishay

Product Category :

Transistors - FETs, MOSFETs - Single

Turn On Delay Time :

16 ns

Terminal Position :

Dual

Vgs(th) (Max) @ Id :

4V @ 250µA

JESD-609 Code :

e3

Gate Charge (Qg) (Max) @ Vgs :

50nC @ 10V

Gate to Source Voltage (Vgs) :

20V

Package / Case :

8-SOIC (0.154, 3.90mm Width)

Element Configuration :

Single

Operating Temperature :

-55°C~150°C TJ

Terminal Finish :

MATTE TIN

Turn-Off Delay Time :

47 ns

Number of Elements :

1

Number of Terminations :

8

Rise Time :

23ns

Time@Peak Reflow Temperature-Max (s) :

40

Operating Mode :

ENHANCEMENT MODE

Packaging :

Tape and Reel (TR)

Drive Voltage (Max Rds On,Min Rds On) :

6V 10V

ECCN Code :

EAR99

Number of Channels :

1

RoHS Status :

ROHS3 Compliant

Radiation Hardening :

No

Transistor Element Material :

SILICON

Drain to Source Breakdown Voltage :

250V

Mounting Type :

Surface Mount

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Published :

2017

Current - Continuous Drain (Id) @ 25°C :

2.1A Ta

Peak Reflow Temperature (Cel) :

260

Factory Lead Time :

14 Weeks

Transistor Application :

SWITCHING

Power Dissipation-Max :

1.56W Ta

Mount :

Surface Mount

FET Type :

N-Channel

Terminal Form :

Gull wing

Fall Time (Typ) :

19 ns

Continuous Drain Current (ID) :

2.1A

Vgs (Max) :

±20V

Series :

TrenchFET®

Number of Pins :

8

Pin Count :

8

Power Dissipation :

1.56W

Rds On (Max) @ Id, Vgs :

155m Ω @ 3A, 10V

Lead Free :

Lead Free

Weight :

186.993455mg