SI4434DY-T1-E3

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Mfr.Part #
SI4434DY-T1-E3
Manufacturer
Vishay
Package / Case
8-SOIC (0.154, 3.90mm Width)
Datasheet
Download
Description
MOSFET N-CH 250V 2.1A 8SO
Stock
549
In Stock :
549

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Manufacturer :
Vishay
Product Category :
Transistors - FETs, MOSFETs - Single
Packaging :
Tape and Reel (TR)
Vgs (Max) :
±20V
Gate Charge (Qg) (Max) @ Vgs :
50nC @ 10V
Resistance :
155mOhm
FET Type :
N-Channel
Transistor Element Material :
SILICON
Number of Pins :
8
Moisture Sensitivity Level (MSL) :
1 (Unlimited)
Package / Case :
8-SOIC (0.154, 3.90mm Width)
Pin Count :
8
Number of Elements :
1
Lead Free :
Lead Free
Width :
4mm
Continuous Drain Current (ID) :
3A
Rds On (Max) @ Id, Vgs :
155m Ω @ 3A, 10V
Height :
1.55mm
Peak Reflow Temperature (Cel) :
260
Series :
TrenchFET®
Vgs(th) (Max) @ Id :
4V @ 250µA
Current - Continuous Drain (Id) @ 25°C :
2.1A Ta
Terminal Position :
Dual
Time@Peak Reflow Temperature-Max (s) :
40
Operating Temperature :
-55°C~150°C TJ
Gate to Source Voltage (Vgs) :
20V
Mount :
Surface Mount
Drain to Source Breakdown Voltage :
250V
Drive Voltage (Max Rds On,Min Rds On) :
6V 10V
Power Dissipation :
1.56W
Weight :
186.993455mg
Number of Channels :
1
Rise Time :
23ns
Radiation Hardening :
No
Number of Terminations :
8
Power Dissipation-Max :
1.56W Ta
Operating Mode :
ENHANCEMENT MODE
Mounting Type :
Surface Mount
JESD-609 Code :
e3
ECCN Code :
EAR99
Turn-Off Delay Time :
47 ns
Turn On Delay Time :
16 ns
Transistor Application :
SWITCHING
Factory Lead Time :
14 Weeks
Length :
5mm
Terminal Form :
Gull wing
Terminal Finish :
MATTE TIN
RoHS Status :
ROHS3 Compliant
Element Configuration :
Single
Fall Time (Typ) :
19 ns
Datasheets
SI4434DY-T1-E3
Introducing Transistors - FETs, MOSFETs - Single Vishay SI4434DY-T1-E3 from Chip IC,where excellence meets affordability. This product stands out with its Number of Pins:8, Package / Case:8-SOIC (0.154, 3.90mm Width), Operating Temperature:-55°C~150°C TJ, Number of Channels:1, Number of Terminations:8, Mounting Type:Surface Mount, SI4434DY-T1-E3 pinout, SI4434DY-T1-E3 datasheet PDF, SI4434DY-T1-E3 amp .Beyond Transistors - FETs, MOSFETs - Single Vishay SI4434DY-T1-E3 ,we also offer EPC2019, EPC2053, EPC2015C, Our vast inventory has you covered. Contact us now for immediate solutions.

Vishay SI4434DY-T1-E3


N-Channel Tape & Reel (TR) 155m Ω @ 3A, 10V ±20V 50nC @ 10V 8-SOIC (0.154, 3.90mm Width)

SI4434DY-T1-E3 Overview


Continuous drain current (ID) is the maximum continuous current (ID) the device can conduct, and it is 3A.When VGS=250V, and ID flows to VDS at 250VVDS, the drain-source breakdown voltage is 250V in this device.Before drain current conduction can begin, the device's turn-off delay time must be charged up to full capacitance. This value is 47 ns.During device turn-on, the input capacitance must be charged for a period of time before drain current conduction can begin, so its delay time is 16 ns seconds.Single MOSFETs transistor is the voltage across the gate-source terminal of a transistor that determines the gate-source voltage, VGS.Using drive voltage (6V 10V), this device helps reduce its power consumption.

SI4434DY-T1-E3 Features


a continuous drain current (ID) of 3A
a drain-to-source breakdown voltage of 250V voltage
the turn-off delay time is 47 ns


SI4434DY-T1-E3 Applications


There are a lot of Vishay Siliconix
SI4434DY-T1-E3 applications of single MOSFETs transistors.


  • Micro Solar Inverter
  • DC/DC converters
  • Power Tools
  • Motor Drives and Uninterruptible Power Supples
  • Synchronous Rectification
  • Battery Protection Circuit
  • Telecom 1 Sever Power Supplies
  • Industrial Power Supplies
  • PFC stages, hard switching PWM stages and resonant switching
  • PWM stages for e.g. PC Silverbox, Adapter, LCD & PDP TV,
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