SI4431BDY-T1-GE3

Manufacturer :

Vishay

Product Category :

Transistors - FETs, MOSFETs - Single

Number of Channels :

1

Radiation Hardening :

No

Drain to Source Voltage (Vdss) :

30V

Current - Continuous Drain (Id) @ 25°C :

5.7A Ta

Factory Lead Time :

14 Weeks

Pin Count :

8

Transistor Element Material :

SILICON

Packaging :

Tape and Reel (TR)

ECCN Code :

EAR99

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Gate Charge (Qg) (Max) @ Vgs :

20nC @ 5V

DS Breakdown Voltage-Min :

30V

REACH SVHC :

Unknown

Operating Temperature :

-55°C~150°C TJ

Number of Pins :

8

Mount :

Surface Mount

Package / Case :

8-SOIC (0.154, 3.90mm Width)

Fall Time (Typ) :

10 ns

Peak Reflow Temperature (Cel) :

260

Power Dissipation-Max :

1.5W Ta

Vgs(th) (Max) @ Id :

3V @ 250µA

Terminal Position :

Dual

Turn-Off Delay Time :

70 ns

Weight :

186.993455mg

Time@Peak Reflow Temperature-Max (s) :

40

Drive Voltage (Max Rds On,Min Rds On) :

4.5V 10V

Rds On (Max) @ Id, Vgs :

30m Ω @ 7.5A, 10V

Rise Time :

10ns

Element Configuration :

Single

Turn On Delay Time :

10 ns

Drain-source On Resistance-Max :

0.03Ohm

Published :

2013

RoHS Status :

ROHS3 Compliant

Terminal Form :

Gull wing

FET Type :

P-Channel

Number of Terminations :

8

Mounting Type :

Surface Mount

JESD-609 Code :

e3

Vgs (Max) :

±20V

Gate to Source Voltage (Vgs) :

20V

Threshold Voltage :

-3V

Contact Plating :

Tin

Operating Mode :

ENHANCEMENT MODE

Continuous Drain Current (ID) :

-5.7A

Series :

TrenchFET®

Number of Elements :

1