SI4431BDY-T1-E3

Manufacturer :

Vishay

Product Category :

Transistors - FETs, MOSFETs - Single

Vgs(th) (Max) @ Id :

3V @ 250µA

Radiation Hardening :

No

Factory Lead Time :

14 Weeks

Number of Pins :

8

Element Configuration :

Single

Terminal Form :

Gull wing

Current - Continuous Drain (Id) @ 25°C :

5.7A Ta

Gate Charge (Qg) (Max) @ Vgs :

20nC @ 5V

Drain Current-Max (Abs) (ID) :

5.7A

Power Dissipation-Max :

1.5W Ta

Termination :

SMD/SMT

Dual Supply Voltage :

-30V

Max Junction Temperature (Tj) :

150°C

Rise Time :

10ns

Lead Free :

Lead Free

JESD-609 Code :

e3

FET Type :

P-Channel

Continuous Drain Current (ID) :

-7.5A

ECCN Code :

EAR99

Drain to Source Breakdown Voltage :

-30V

Threshold Voltage :

-1V

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Operating Mode :

ENHANCEMENT MODE

Package / Case :

8-SOIC (0.154, 3.90mm Width)

Fall Time (Typ) :

47 ns

Weight :

186.993455mg

RoHS Status :

ROHS3 Compliant

Transistor Element Material :

SILICON

Mount :

Surface Mount

Published :

2009

Drain to Source Voltage (Vdss) :

30V

Turn On Delay Time :

10 ns

Length :

5mm

Series :

TrenchFET®

Resistance :

30mOhm

Terminal Finish :

MATTE TIN

REACH SVHC :

No SVHC

Peak Reflow Temperature (Cel) :

260

Number of Channels :

1

Packaging :

Tape and Reel (TR)

Rds On (Max) @ Id, Vgs :

30m Ω @ 7.5A, 10V

Mounting Type :

Surface Mount

Terminal Position :

Dual

Vgs (Max) :

±20V

Time@Peak Reflow Temperature-Max (s) :

30

Pin Count :

8

Operating Temperature :

-55°C~150°C TJ

Nominal Vgs :

-1 V

Drive Voltage (Max Rds On,Min Rds On) :

4.5V 10V

Turn-Off Delay Time :

70 ns

Height :

1.75mm

Width :

4mm

Number of Elements :

1

Gate to Source Voltage (Vgs) :

20V

Power Dissipation :

1.5W

Number of Terminations :

8