SI4430BDY-T1-GE3

Manufacturer :

Vishay

Product Category :

Transistors - FETs, MOSFETs - Single

Pin Count :

8

Number of Elements :

1

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Continuous Drain Current (ID) :

20A

Published :

2009

Weight :

186.993455mg

Height :

1.55mm

Terminal Form :

Gull wing

ECCN Code :

EAR99

Terminal Position :

Dual

Element Configuration :

Single

Mount :

Surface Mount

Transistor Element Material :

SILICON

Vgs(th) (Max) @ Id :

3V @ 250µA

Time@Peak Reflow Temperature-Max (s) :

30

Factory Lead Time :

14 Weeks

Turn-Off Delay Time :

60 ns

Threshold Voltage :

3V

Drain-source On Resistance-Max :

0.0045ohm

Vgs (Max) :

±20V

Operating Temperature :

-55°C~150°C TJ

Fall Time (Typ) :

14 ns

Drain to Source Breakdown Voltage :

30V

Packaging :

Tape and Reel (TR)

Power Dissipation-Max :

1.6W Ta

Operating Mode :

ENHANCEMENT MODE

Number of Pins :

8

Length :

5mm

Package / Case :

8-SOIC (0.154, 3.90mm Width)

Drive Voltage (Max Rds On,Min Rds On) :

4.5V 10V

Number of Terminations :

8

Number of Channels :

1

REACH SVHC :

Unknown

Terminal Finish :

PURE MATTE TIN

Current - Continuous Drain (Id) @ 25°C :

14A Ta

Series :

TrenchFET®

Rds On (Max) @ Id, Vgs :

4.5m Ω @ 20A, 10V

Gate Charge (Qg) (Max) @ Vgs :

36nC @ 4.5V

FET Type :

N-Channel

Mounting Type :

Surface Mount

Width :

4mm

RoHS Status :

ROHS3 Compliant

Turn On Delay Time :

20 ns

Peak Reflow Temperature (Cel) :

260

Radiation Hardening :

No

Gate to Source Voltage (Vgs) :

20V

JESD-609 Code :

e3

Rise Time :

14ns