SI4430BDY-T1-E3

Manufacturer :

Vishay

Product Category :

Transistors - FETs, MOSFETs - Single

Factory Lead Time :

14 Weeks

Pin Count :

8

Continuous Drain Current (ID) :

14A

Mounting Type :

Surface Mount

Turn On Delay Time :

20 ns

Gate Charge (Qg) (Max) @ Vgs :

36nC @ 4.5V

RoHS Status :

ROHS3 Compliant

Power Dissipation :

1.6W

Vgs(th) (Max) @ Id :

3V @ 250µA

Number of Pins :

8

Power Dissipation-Max :

1.6W Ta

Time@Peak Reflow Temperature-Max (s) :

40

Threshold Voltage :

1V

Operating Temperature :

-55°C~150°C TJ

Series :

TrenchFET®

Drain to Source Voltage (Vdss) :

30V

Lead Free :

Lead Free

Weight :

186.993455mg

Element Configuration :

Single

Terminal Position :

Dual

JESD-609 Code :

e3

Operating Mode :

ENHANCEMENT MODE

REACH SVHC :

Unknown

Rds On (Max) @ Id, Vgs :

4.5m Ω @ 20A, 10V

Width :

4mm

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Height :

1.55mm

Package / Case :

8-SOIC (0.154, 3.90mm Width)

Peak Reflow Temperature (Cel) :

260

Published :

2005

Turn-Off Delay Time :

60 ns

Number of Terminations :

8

Rise Time :

14ns

Number of Channels :

1

DS Breakdown Voltage-Min :

30V

Fall Time (Typ) :

14 ns

Vgs (Max) :

±20V

Current - Continuous Drain (Id) @ 25°C :

14A Ta

Radiation Hardening :

No

Contact Plating :

Tin

Transistor Element Material :

SILICON

FET Type :

N-Channel

Number of Elements :

1

Gate to Source Voltage (Vgs) :

20V

Length :

5mm

Resistance :

4.5mOhm

Terminal Form :

Gull wing

Mount :

Surface Mount

Packaging :

Tape and Reel (TR)

Drive Voltage (Max Rds On,Min Rds On) :

4.5V 10V

ECCN Code :

EAR99