SI4427BDY-T1-GE3

Manufacturer :

Vishay

Product Category :

Transistors - FETs, MOSFETs - Single

Element Configuration :

Single

Fall Time (Typ) :

110 ns

Drain to Source Voltage (Vdss) :

30V

Gate to Source Voltage (Vgs) :

12V

Drain to Source Breakdown Voltage :

-30V

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Mount :

Surface Mount

Factory Lead Time :

14 Weeks

Operating Temperature :

-55°C~150°C TJ

Mounting Type :

Surface Mount

Termination :

SMD/SMT

Terminal Form :

Gull wing

RoHS Status :

ROHS3 Compliant

Transistor Element Material :

SILICON

Power Dissipation-Max :

1.5W Ta

JESD-609 Code :

e3

Turn-Off Delay Time :

242 ns

Weight :

186.993455mg

Package / Case :

8-SOIC (0.154, 3.90mm Width)

Number of Elements :

1

Rise Time :

15ns

Terminal Finish :

MATTE TIN

Turn On Delay Time :

12 ns

REACH SVHC :

Unknown

Vgs (Max) :

±12V

Nominal Vgs :

-1.4 V

Time@Peak Reflow Temperature-Max (s) :

30

Peak Reflow Temperature (Cel) :

260

Number of Terminations :

8

Power Dissipation :

1.5W

Rds On (Max) @ Id, Vgs :

10.5m Ω @ 12.6A, 10V

Gate Charge (Qg) (Max) @ Vgs :

70nC @ 4.5V

Threshold Voltage :

-600mV

FET Type :

P-Channel

Resistance :

19.5MOhm

Terminal Position :

Dual

ECCN Code :

EAR99

Number of Pins :

8

Radiation Hardening :

No

Drive Voltage (Max Rds On,Min Rds On) :

10V

Pin Count :

8

Published :

2014

Series :

TrenchFET®

Number of Channels :

1

Vgs(th) (Max) @ Id :

1.4V @ 250μA

Packaging :

Tape and Reel (TR)

Width :

4mm

Length :

5mm

Current - Continuous Drain (Id) @ 25°C :

9.7A Ta

Dual Supply Voltage :

-30V

Continuous Drain Current (ID) :

-12.6A

Drain Current-Max (Abs) (ID) :

9.7A

Operating Mode :

ENHANCEMENT MODE

Height :

1.55mm