SI4427BDY-T1-E3

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Mfr.Part #
SI4427BDY-T1-E3
Manufacturer
Vishay
Package / Case
8-SOIC (0.154, 3.90mm Width)
Datasheet
Download
Description
MOSFET P-CH 30V 9.7A 8SO
Stock
29,945
In Stock :
29,945

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Manufacturer :
Vishay
Product Category :
Transistors - FETs, MOSFETs - Single
Drive Voltage (Max Rds On,Min Rds On) :
2.5V 10V
Published :
2016
Number of Pins :
8
Gate Charge (Qg) (Max) @ Vgs :
70nC @ 4.5V
Turn-Off Delay Time :
242 ns
Height :
1.55mm
Continuous Drain Current (ID) :
-12.6A
Peak Reflow Temperature (Cel) :
260
Operating Mode :
ENHANCEMENT MODE
Number of Channels :
1
Rise Time :
15ns
Threshold Voltage :
-1.4V
Transistor Element Material :
SILICON
Terminal Finish :
MATTE TIN
Number of Terminations :
8
Drain Current-Max (Abs) (ID) :
9.7A
Time@Peak Reflow Temperature-Max (s) :
40
Package / Case :
8-SOIC (0.154, 3.90mm Width)
Pin Count :
8
Fall Time (Typ) :
15 ns
Operating Temperature :
-55°C~150°C TJ
Rds On (Max) @ Id, Vgs :
10.5m Ω @ 12.6A, 10V
Drain to Source Breakdown Voltage :
-30V
Terminal Position :
Dual
Series :
TrenchFET®
Power Dissipation-Max :
1.5W Ta
Power Dissipation :
1.5W
Lead Free :
Lead Free
Turn On Delay Time :
12 ns
Current - Continuous Drain (Id) @ 25°C :
9.7A Ta
ECCN Code :
EAR99
Number of Elements :
1
Width :
4mm
Weight :
186.993455mg
Terminal Form :
Gull wing
Mounting Type :
Surface Mount
Gate to Source Voltage (Vgs) :
12V
Radiation Hardening :
No
JESD-609 Code :
e3
Factory Lead Time :
14 Weeks
FET Type :
P-Channel
Length :
5mm
Vgs (Max) :
±12V
REACH SVHC :
Unknown
RoHS Status :
ROHS3 Compliant
Resistance :
10.5mOhm
Drain to Source Voltage (Vdss) :
30V
Vgs(th) (Max) @ Id :
1.4V @ 250μA
Packaging :
Tape and Reel (TR)
Moisture Sensitivity Level (MSL) :
1 (Unlimited)
Mount :
Surface Mount
Element Configuration :
Single
Datasheets
SI4427BDY-T1-E3
Introducing Transistors - FETs, MOSFETs - Single Vishay SI4427BDY-T1-E3 from Chip IC,where excellence meets affordability. This product stands out with its Number of Pins:8, Number of Channels:1, Number of Terminations:8, Package / Case:8-SOIC (0.154, 3.90mm Width), Operating Temperature:-55°C~150°C TJ, Mounting Type:Surface Mount, SI4427BDY-T1-E3 pinout, SI4427BDY-T1-E3 datasheet PDF, SI4427BDY-T1-E3 amp .Beyond Transistors - FETs, MOSFETs - Single Vishay SI4427BDY-T1-E3 ,we also offer EPC2019, EPC2053, EPC2015C, Our vast inventory has you covered. Contact us now for immediate solutions.

Vishay SI4427BDY-T1-E3


P-Channel Tape & Reel (TR) 10.5m Ω @ 12.6A, 10V ±12V 70nC @ 4.5V 30V 8-SOIC (0.154, 3.90mm Width)

SI4427BDY-T1-E3 Description


SI4427BDY-T1-E3 is a 30V P-Channel MOSFET. A P-Channel MOSFET is a type of MOSFET in which the channel of the MOSFET is composed of a majority of holes as current carriers. When the MOSFET is activated and on, most of the current flowing is holes moving through the channels. The Operating and Storage Temperature Range is between -55 and +150℃. And the LED SI4427BDY-T1-E3 in the SOIC-8 package with 1.5W Power Dissipation.



SI4427BDY-T1-E3 Features


Halogen-free According to IEC 61249-2-21Definition

TrenchFET® Power MOSFETs

Compliant with RoHS Directive 2002/95/EC

Drain-Source Voltage: -30V 

Gate-Source Voltage: ±12V



SI4427BDY-T1-E3 Applications


Communications equipment 

Datacom module 

Enterprise systems 

Enterprise machine 

Personal electronics 

Portable electronics


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