SI4427BDY-T1-E3
- Mfr.Part #
- SI4427BDY-T1-E3
- Manufacturer
- Vishay
- Package / Case
- 8-SOIC (0.154, 3.90mm Width)
- Datasheet
- Download
- Description
- MOSFET P-CH 30V 9.7A 8SO
- Stock
- 29,945
- In Stock :
- 29,945
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- Manufacturer :
- Vishay
- Product Category :
- Transistors - FETs, MOSFETs - Single
- Drive Voltage (Max Rds On,Min Rds On) :
- 2.5V 10V
- Published :
- 2016
- Number of Pins :
- 8
- Gate Charge (Qg) (Max) @ Vgs :
- 70nC @ 4.5V
- Turn-Off Delay Time :
- 242 ns
- Height :
- 1.55mm
- Continuous Drain Current (ID) :
- -12.6A
- Peak Reflow Temperature (Cel) :
- 260
- Operating Mode :
- ENHANCEMENT MODE
- Number of Channels :
- 1
- Rise Time :
- 15ns
- Threshold Voltage :
- -1.4V
- Transistor Element Material :
- SILICON
- Terminal Finish :
- MATTE TIN
- Number of Terminations :
- 8
- Drain Current-Max (Abs) (ID) :
- 9.7A
- Time@Peak Reflow Temperature-Max (s) :
- 40
- Package / Case :
- 8-SOIC (0.154, 3.90mm Width)
- Pin Count :
- 8
- Fall Time (Typ) :
- 15 ns
- Operating Temperature :
- -55°C~150°C TJ
- Rds On (Max) @ Id, Vgs :
- 10.5m Ω @ 12.6A, 10V
- Drain to Source Breakdown Voltage :
- -30V
- Terminal Position :
- Dual
- Series :
- TrenchFET®
- Power Dissipation-Max :
- 1.5W Ta
- Power Dissipation :
- 1.5W
- Lead Free :
- Lead Free
- Turn On Delay Time :
- 12 ns
- Current - Continuous Drain (Id) @ 25°C :
- 9.7A Ta
- ECCN Code :
- EAR99
- Number of Elements :
- 1
- Width :
- 4mm
- Weight :
- 186.993455mg
- Terminal Form :
- Gull wing
- Mounting Type :
- Surface Mount
- Gate to Source Voltage (Vgs) :
- 12V
- Radiation Hardening :
- No
- JESD-609 Code :
- e3
- Factory Lead Time :
- 14 Weeks
- FET Type :
- P-Channel
- Length :
- 5mm
- Vgs (Max) :
- ±12V
- REACH SVHC :
- Unknown
- RoHS Status :
- ROHS3 Compliant
- Resistance :
- 10.5mOhm
- Drain to Source Voltage (Vdss) :
- 30V
- Vgs(th) (Max) @ Id :
- 1.4V @ 250μA
- Packaging :
- Tape and Reel (TR)
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Mount :
- Surface Mount
- Element Configuration :
- Single
- Datasheets
- SI4427BDY-T1-E3

P-Channel Tape & Reel (TR) 10.5m Ω @ 12.6A, 10V ±12V 70nC @ 4.5V 30V 8-SOIC (0.154, 3.90mm Width)
SI4427BDY-T1-E3 Description
SI4427BDY-T1-E3 is a 30V P-Channel MOSFET. A P-Channel MOSFET is a type of MOSFET in which the channel of the MOSFET is composed of a majority of holes as current carriers. When the MOSFET is activated and on, most of the current flowing is holes moving through the channels. The Operating and Storage Temperature Range is between -55 and +150℃. And the LED SI4427BDY-T1-E3 in the SOIC-8 package with 1.5W Power Dissipation.
SI4427BDY-T1-E3 Features
Halogen-free According to IEC 61249-2-21Definition
TrenchFET® Power MOSFETs
Compliant with RoHS Directive 2002/95/EC
Drain-Source Voltage: -30V
Gate-Source Voltage: ±12V
SI4427BDY-T1-E3 Applications
Communications equipment
Datacom module
Enterprise systems
Enterprise machine
Personal electronics
Portable electronics
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