SI4426DY-T1-E3

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Mfr.Part #
SI4426DY-T1-E3
Manufacturer
Vishay
Package / Case
8-SOIC (0.154, 3.90mm Width)
Datasheet
Download
Description
MOSFET N-CH 20V 6.5A 8SO
Stock
7,457
In Stock :
7,457

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Manufacturer :
Vishay
Product Category :
Transistors - FETs, MOSFETs - Single
Rise Time :
40ns
Weight :
506.605978mg
Turn On Delay Time :
40 ns
Length :
5mm
Terminal Finish :
MATTE TIN
Vgs(th) (Max) @ Id :
1.4V @ 250μA
Packaging :
Tape and Reel (TR)
Width :
4mm
Number of Elements :
1
Number of Channels :
1
Gate to Source Voltage (Vgs) :
12V
Moisture Sensitivity Level (MSL) :
1 (Unlimited)
Pin Count :
8
Power Dissipation-Max :
1.5W Ta
Continuous Drain Current (ID) :
6.5A
Factory Lead Time :
14 Weeks
Number of Terminations :
8
Drain to Source Breakdown Voltage :
20V
Gate Charge (Qg) (Max) @ Vgs :
50nC @ 4.5V
Radiation Hardening :
No
Operating Mode :
ENHANCEMENT MODE
Power Dissipation :
1.5W
Number of Pins :
8
Turn-Off Delay Time :
90 ns
Series :
TrenchFET®
Mount :
Surface Mount
Vgs (Max) :
±12V
Current - Continuous Drain (Id) @ 25°C :
6.5A Ta
Lead Free :
Lead Free
Terminal Form :
Gull wing
Height :
1.55mm
FET Type :
N-Channel
Resistance :
25mOhm
Package / Case :
8-SOIC (0.154, 3.90mm Width)
Published :
2016
ECCN Code :
EAR99
Peak Reflow Temperature (Cel) :
260
Fall Time (Typ) :
40 ns
Terminal Position :
Dual
JESD-609 Code :
e3
RoHS Status :
ROHS3 Compliant
Drive Voltage (Max Rds On,Min Rds On) :
2.5V 4.5V
Operating Temperature :
-55°C~150°C TJ
Rds On (Max) @ Id, Vgs :
25m Ω @ 8.5A, 4.5V
Element Configuration :
Single
Transistor Element Material :
SILICON
Time@Peak Reflow Temperature-Max (s) :
40
Mounting Type :
Surface Mount
Datasheets
SI4426DY-T1-E3
Introducing Transistors - FETs, MOSFETs - Single Vishay SI4426DY-T1-E3 from Chip IC,where excellence meets affordability. This product stands out with its Number of Channels:1, Number of Terminations:8, Number of Pins:8, Package / Case:8-SOIC (0.154, 3.90mm Width), Operating Temperature:-55°C~150°C TJ, Mounting Type:Surface Mount, SI4426DY-T1-E3 pinout, SI4426DY-T1-E3 datasheet PDF, SI4426DY-T1-E3 amp .Beyond Transistors - FETs, MOSFETs - Single Vishay SI4426DY-T1-E3 ,we also offer EPC2019, EPC2053, EPC2015C, Our vast inventory has you covered. Contact us now for immediate solutions.

Vishay SI4426DY-T1-E3


N-Channel Tape & Reel (TR) 25m Ω @ 8.5A, 4.5V ±12V 50nC @ 4.5V 8-SOIC (0.154, 3.90mm Width)

SI4426DY-T1-E3 Overview


In this device, the drain current (ID) is equal to the continuous current transistor can conduct.This device has 20V drain-to-source breakdown voltage, where VDS corresponds to the ID at which a specified value of ID flows and VGS equals 20V.As a result of its turn-off delay time, which is 90 ns, the device has taken time to charge its input capacitance before drain current conduction begins.Input capacitance charge delays drain current conduction until the time it takes to charge input capacitance reaches 40 ns.Gate-source voltages (VGS) are voltages that fall across the gate-source terminal of FET transistors. VGS is sometimes 12VV.In addition to reducing power consumption, this device uses drive voltage (2.5V 4.5V).

SI4426DY-T1-E3 Features


a continuous drain current (ID) of 6.5A
a drain-to-source breakdown voltage of 20V voltage
the turn-off delay time is 90 ns


SI4426DY-T1-E3 Applications


There are a lot of Vishay Siliconix
SI4426DY-T1-E3 applications of single MOSFETs transistors.


  • DC/DC converters
  • Power Tools
  • Motor Drives and Uninterruptible Power Supples
  • Synchronous Rectification
  • Battery Protection Circuit
  • Telecom 1 Sever Power Supplies
  • Industrial Power Supplies
  • PFC stages, hard switching PWM stages and resonant switching
  • PWM stages for e.g. PC Silverbox, Adapter, LCD & PDP TV,
  • Lighting, Server, Telecom and UPS.
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