SI4425DDY-T1-GE3

Manufacturer :

Vishay

Product Category :

Transistors - FETs, MOSFETs - Single

RoHS Status :

ROHS3 Compliant

Rise Time :

9ns

Time@Peak Reflow Temperature-Max (s) :

30

Gate to Source Voltage (Vgs) :

20V

Power Dissipation-Max :

2.5W Ta 5.7W Tc

Factory Lead Time :

14 Weeks

Weight :

186.993455mg

Transistor Application :

SWITCHING

REACH SVHC :

Unknown

Threshold Voltage :

-1.2V

Mount :

Surface Mount

Series :

TrenchFET®

Peak Reflow Temperature (Cel) :

260

JESD-609 Code :

e3

Transistor Element Material :

SILICON

Pbfree Code :

yes

Resistance :

9.8mOhm

Turn-Off Delay Time :

42 ns

Number of Terminations :

8

FET Type :

P-Channel

Radiation Hardening :

No

Max Junction Temperature (Tj) :

150°C

Nominal Vgs :

-1.2 V

Vgs(th) (Max) @ Id :

2.5V @ 250μA

Mounting Type :

Surface Mount

Number of Elements :

1

Drive Voltage (Max Rds On,Min Rds On) :

4.5V 10V

Fall Time (Typ) :

9 ns

Number of Pins :

8

Lead Free :

Lead Free

Power Dissipation :

5.7W

ECCN Code :

EAR99

Number of Channels :

1

Continuous Drain Current (ID) :

-13A

Width :

4mm

Pin Count :

8

Published :

2013

Drain to Source Voltage (Vdss) :

30V

Current - Continuous Drain (Id) @ 25°C :

19.7A Tc

Height :

1.75mm

Input Capacitance (Ciss) (Max) @ Vds :

2610pF @ 15V

Configuration :

SINGLE WITH BUILT-IN DIODE

Rds On (Max) @ Id, Vgs :

9.8m Ω @ 13A, 10V

Operating Temperature :

-55°C~150°C TJ

Packaging :

Tape and Reel (TR)

Terminal Position :

Dual

Drain to Source Breakdown Voltage :

-30V

Length :

5mm

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Vgs (Max) :

±20V

Operating Mode :

ENHANCEMENT MODE

Gate Charge (Qg) (Max) @ Vgs :

80nC @ 10V

Turn On Delay Time :

12 ns

Contact Plating :

Tin

Terminal Form :

Gull wing

Package / Case :

8-SOIC (0.154, 3.90mm Width)