SI4425BDY-T1-E3
- Mfr.Part #
- SI4425BDY-T1-E3
- Manufacturer
- Vishay
- Package / Case
- 8-SOIC (0.154, 3.90mm Width)
- Datasheet
- Download
- Description
- MOSFET P-CH 30V 8.8A 8SO
- Stock
- 25,725
- In Stock :
- 25,725
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- Manufacturer :
- Vishay
- Product Category :
- Transistors - FETs, MOSFETs - Single
- Current - Continuous Drain (Id) @ 25°C :
- 8.8A Ta
- Package / Case :
- 8-SOIC (0.154, 3.90mm Width)
- Rds On (Max) @ Id, Vgs :
- 12m Ω @ 11.4A, 10V
- Terminal Form :
- Gull wing
- ECCN Code :
- EAR99
- Resistance :
- 12mOhm
- Vgs(th) (Max) @ Id :
- 3V @ 250µA
- Weight :
- 186.993455mg
- Number of Elements :
- 1
- Power Dissipation-Max :
- 1.5W Ta
- Peak Reflow Temperature (Cel) :
- 260
- Pin Count :
- 8
- Packaging :
- Tape and Reel (TR)
- Mounting Type :
- Surface Mount
- Number of Pins :
- 8
- Nominal Vgs :
- -400 mV
- Rise Time :
- 13ns
- Drive Voltage (Max Rds On,Min Rds On) :
- 4.5V 10V
- Number of Terminations :
- 8
- Gate to Source Voltage (Vgs) :
- 20V
- Threshold Voltage :
- -400mV
- Operating Temperature :
- -55°C~150°C TJ
- Length :
- 5mm
- Drain to Source Voltage (Vdss) :
- 30V
- Power Dissipation :
- 1.5W
- JESD-609 Code :
- e3
- Terminal Position :
- Dual
- Vgs (Max) :
- ±20V
- Published :
- 2016
- Fall Time (Typ) :
- 13 ns
- Pbfree Code :
- yes
- Drain to Source Breakdown Voltage :
- -30V
- Turn On Delay Time :
- 15 ns
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Series :
- TrenchFET®
- Element Configuration :
- Single
- Width :
- 4mm
- REACH SVHC :
- Unknown
- Operating Mode :
- ENHANCEMENT MODE
- FET Type :
- P-Channel
- Number of Channels :
- 1
- Turn-Off Delay Time :
- 100 ns
- Transistor Element Material :
- SILICON
- Transistor Application :
- SWITCHING
- Gate Charge (Qg) (Max) @ Vgs :
- 100nC @ 10V
- Continuous Drain Current (ID) :
- -11.4A
- Height :
- 1.55mm
- Contact Plating :
- Tin
- Radiation Hardening :
- No
- RoHS Status :
- ROHS3 Compliant
- Time@Peak Reflow Temperature-Max (s) :
- 20
- Mount :
- Surface Mount
- Lead Free :
- Lead Free
- Factory Lead Time :
- 14 Weeks
- Datasheets
- SI4425BDY-T1-E3

P-Channel Tape & Reel (TR) 12m Ω @ 11.4A, 10V ±20V 100nC @ 10V 30V 8-SOIC (0.154, 3.90mm Width)
SI4425BDY-T1-E3 Overview
A device's drain current is its maximum continuous current, and this device has a continuous drain current (ID) of -11.4A.With a drain-source breakdown voltage of -30V and a drain-source current flow rate of 1, this device has a drain-source breakdown voltage of -30V.The turn-off delay time is the amount of time it takes to charge the input capacitance of the device before drain current conduction can begin, and it is 100 ns.Input capacitance charging takes time before drain current conduction begins, so the turn-on delay time is 15 ns.Single MOSFETs transistor is the voltage that falls across the gate-source terminal of a FET transistor that is called the gate-source voltage, VGS.-400mV is the threshold voltage at which an electrical device activates any of its operations.Single MOSFETs transistor is necessary to have a drain to source voltage (Vdss) of 30V.Using drive voltage (4.5V 10V) reduces this device's overall power consumption.
SI4425BDY-T1-E3 Features
a continuous drain current (ID) of -11.4A
a drain-to-source breakdown voltage of -30V voltage
the turn-off delay time is 100 ns
a threshold voltage of -400mV
a 30V drain to source voltage (Vdss)
SI4425BDY-T1-E3 Applications
There are a lot of Vishay Siliconix
SI4425BDY-T1-E3 applications of single MOSFETs transistors.
- Lighting
- Uninterruptible Power Supply
- AC-DC Power Supply
- Synchronous Rectification for ATX 1 Server I Telecom PSU
- Motor drives and Uninterruptible Power Supplies
- Micro Solar Inverter
- DC/DC converters
- Power Tools
- Motor Drives and Uninterruptible Power Supples
- Synchronous Rectification
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